Patents Assigned to HONG WU YES ENGINEERING TECHNOGOLOGY RESEARCH INSTITUTE CO., LTD.
  • Patent number: 10720327
    Abstract: This disclosure provides a method and a device for manufacturing a semiconductor substrate. The method for manufacturing a semiconductor substrate comprises the following steps: heating a semiconductor material to a molten state to obtain a molten semiconductor material; thermally spraying the molten semiconductor material onto a baseplate by using a thermal spraying gun, then cooling to solidify the molten semiconductor material on the baseplate to obtain the semiconductor substrate. The disclosed method offers, when manufacturing the semiconductor substrate, high material utilization, low manufacturing cost, and the ability to manufacture larger semiconductor substrate, with controllable thickness and high purity, providing broad application prospects.
    Type: Grant
    Filed: September 17, 2018
    Date of Patent: July 21, 2020
    Assignee: HONG WU YES ENGINEERING TECHNOGOLOGY RESEARCH INSTITUTE CO., LTD.
    Inventor: Guangwu Li