Abstract: An SOF measuring system that can continuously measure SOF and a soot measuring system that can continuously measure soot are connected with an exhaust gas line. The soot measuring system comprises a diluter that selectively dilutes either one of the exhaust gas and standard gas whose hydrocarbon concentration is known with diluent gas and extrudes it. A dilution ratio adjusting device can adjust a dilution ratio of the diluter. A soot detector continuously detects soot in the exhaust gas or the standard gas diluted by the diluter. The SOF measuring system can be connected with the diluter so that an exhaust gas analyzer can measure the hydrocarbon concentration in the standard gas diluted by the diluter.

Abstract: An exhaust gas analyzer includes a main flow path and at least one sub-flow path. Exhaust gas from an internal combustion engine is introduced to the main flow path; sub-flow paths are parallel to the main flow path. Plural kinds of analyzers are mounted on the main flow path and sub-flow paths to measure concentration of multiple components in the exhaust gas. Actual measurement values of the concentration for the measured components are obtained. A deviance from a true value generated to an actual measurement value due to a mutual influence of the measured components is corrected based on at least one actual measurement value.

Abstract: An SOF measuring system that can continuously measure SOF and a soot measuring system that can continuously measure soot are connected with an exhaust gas line. The soot measuring system comprises a diluter that selectively dilutes either one of the exhaust gas and standard gas whose hydrocarbon concentration is known with diluent gas and extrudes it. A dilution ratio adjusting device can adjust a dilution ratio of the diluter. A soot detector continuously detects soot in the exhaust gas or the standard gas diluted by the diluter. The SOF measuring system can be connected with the diluter so that an exhaust gas analyzer can measure the hydrocarbon concentration in the standard gas diluted by the diluter.

Abstract: An analysis method and analysis apparatus involve analysis for a sulfur component using ultraviolet fluorescence capable of removing the interferential influence of NO with good efficiency and certainty to thereby measure a concentration of only sulfur components such as SO2 and others even in continuous measurement over a long term with a high precision. An analysis method involves analysis for a sulfur component using ultraviolet fluorescence. A sample gas is illuminated with ultraviolet and fluorescence is emitted by the ultraviolet illumination and detected to measure concentrations of sulfur components including at least SO2 in the sample gas. NO, which is an interferential component in the sample gas, is oxidized to nitrogen dioxide, followed by the illuminating of the sample gas with ultraviolet.

Abstract: The present invention relates to a method of measuring a physical or chemical phenomenon by feeding electric charge from an charge feeding portion to a sensing portion having potential changed depending on the magnitude of physical or chemical amount, removing the fed electric charge via a floating diffusion from the sensing portion, and detecting the amount of the fed electric charge thereby measuring the physical or chemical phenomenon, which comprises allowing the electric charge from the sensing portion to be accumulated in a stage before the floating diffusion, to release a part thereof, and simultaneously transmitting, to the floating diffusion, the amount of electric charge containing the electric charge corresponding to the potential corresponding to the magnitude of physical or chemical amount, wherein the release amount of electric charge is changeable.

Abstract: A metal oxide thin film may be obtained by providing a source gas and an oxidizer gas. The source gas may include a hydrolyzable metallic compound. The oxidizer gas may include a hydrate of a metal salt. The metal oxide thin film may be obtained by alternately feeding the source gas and the oxidizer gas into a reaction chamber in which a substrate is placed.

Abstract: A method of manufacturing a metal compound thin film is disclosed. The method may include forming a first metal compound layer on a substrate by atomic layer deposition, performing annealing on the first metal compound layer in an atmosphere containing a nitrogen compound gas, thereby diffusing nitrogen into the first metal compound layer, and forming a second metal compound layer on the first metal compound layer by atomic layer deposition.

Abstract: There is provided a sample treatment apparatus which can, continuously and stably for a long time, treat a sample containing an easily precipitating substance such as sulfur and a measuring apparatus providing it. The sample treatment apparatus includes: a path for introducing a fluid for an aspirator, at least two sample flow paths A connected in one side to the path for introducing a fluid for an aspirator and connected in the other side to a sample collecting part, a sample flow path B connected in one side to one sample flow path A passing a fluid for an aspirator and connected in the other side to the other sample flow path A, a cooling part for cooling a part of the sample flow paths A, and a controller for selecting and switching the sample flow paths A into which a fluid for an aspirator is introduced.

Abstract: To provide a semiconductor device that enables to suppress a defect density of a gate insulating film of an MISFET, gain a sufficient electric characteristic thereof, and make an Equivalent Oxide Thickness (EOT) of the gate insulating film 1.0 nm or less. The MISFETs are formed to have the gate insulating film formed on a main surface of a silicon substrate, and a gate electrode formed on the gate insulating film, wherein the gate insulating film includes a metal silicate layer formed by a metal oxide layer and a silicon oxide layer and the metal silicate layer is formed so as to have concentration gradients of metal and silicon from a silicon substrate side toward a gate electrode side.

Abstract: An exhaust gas measuring bag which can smoothly exhaust gas and perform back purge and back dump in a short period of time without leading to an increase in size and costs of the system is provided. The exhaust gas measuring bag includes a gas connection part which is connected to an external passage flowing measurement gas therethrough for analyzing various components included in the exhaust gas. A pipe is connected to an internal passage of the gas connection part and a plurality of gas ejection holes for ejecting the gas are formed on the pipe. A bag body is deformable and has an internal space for storing at least a connection side of the gas connection part to the pipe, and the whole of the pipe therein. The pipe encloses the gas ejected from the gas ejection holes into the internal space therein. A gas exhaust port is provided, at the gas connection part or a member separated from the gas connection part, and exhausts the gas enclosed in the internal space to the external passage.

Abstract: An apparatus for analyzing the amount of gas in a solid sample such as a contained oxygen analyzing apparatus and method utilizing a preliminary reducing furnace which can be connected to an analyzing furnace by a transfer unit. A sample such as steel can be reduced in the preliminary reducing furnace and transferred to the analyzing furnace, for example, by a magnetic force, a gripping unit or a transporting sample body holder. A controller can control the application of heat and the mixing of a metal flux to provide discharge gas to an analyzer.

Abstract: A gas sampling bag is capable of blowing out the gas uniformly into the bag main body, and filling the bag main body with gas in a securely mixed state. A gas sampling bag that is connected to a constant volume sampling passage, contains a pipe, on which a plurality of gas inlet/outlet holes are formed, in a bag main body, and allows the gas to flow into/out of the bag main body through the gas inlet/outlet holes. The opening of the plurality of gas inlet/outlet holes is formed in such a manner that the size is minimized while the pressure loss is suppressed so as not to increase as far as possible.

Abstract: A high dielectric gate insulating film having the structure that a high-nitrogen layer, a low-nitrogen layer, and a high-nitrogen layer are layered in this order from a silicon-substrate side.

Abstract: With the exhaust gas measuring device and the exhaust gas measuring method, the workload of the internal combustion engine is calculated based on a discharged amount of a component related to a carbon compound such as CO, CO2 and THC in the exhaust gas discharged from the internal combustion engine. As a result, the workload of the internal combustion engine can be calculated easily without using torque data of the ECU and the mass of each component in the exhaust gas discharged from the internal combustion engine per unit workload can be calculated.

Abstract: The present invention provides an immunoassay method in which blood can be measured even without pretreatment by means of a centrifuge etc. In the present invention, antibodies or antigens in a sample are subjected to agglutination reaction with insoluble carriers onto which antigens or antibodies specifically reacting with the antibodies or antigens in the sample have been immobilized and the resulting agglutination mixture is determined for the change in its absorbance or in its scattered light by irradiation with light, wherein said sample is whole blood and the whole blood is forcibly lyzed.

Abstract: The present invention provides a method and substrate examining device that sequentially and automatically measures at least the thickness and the internal stress of the thin film at a predetermined measurement point on the surface of every manufactured semiconductor substrate to perform quality control on each substrate, and reliably recognizes the cause of defects to improve productivity. The examining device and method accurately analyzes the correlation between film thickness and stress to establish the manufacturing processes necessary for manufacturing a semiconductor substrate of higher performance, and measures the distribution of a physical quantity such as internal stress, index of refraction, and composition of the semiconductor substrate in the film thickness direction, without being influenced by change in ambient environmental temperature thereby further improving examination precision.

Abstract: The present invention provides an improved ion measuring composite electrode, measuring instrument incorporating the composite electrode, and a manufacturing method for forming a preform of a composite double glass pipe for forming the ion measuring composite electrode. A hollow inner pipe and a hollow outer pipe are axially aligned with an elongated member having liquid absorption capacity. The inner pipe is welded to the outer pipe to form an annular space there between for receiving reference electrode liquid. The elongated member insures electrical conductivity even in the presence of air bubbles so that the measuring instrument is operatable and an appropriate weld can be easily manufactured to improve productivity.

Abstract: The present invention provides a method of and a device for measuring the stress in a semiconductor material. An excitation light is irradiated on a semiconductor material formed with a silicon germanium layer and a strained silicon layer in a multilayer structure on a single crystal silicon substrate from the direction of the strained silicon layer.