Abstract: An electric field sensor which measures an electric field generated by a target utilizing an electro-optic effect, the electric field sensor including a light source, an electro-optic crystal on which light in a predetermined polarization state emitted from the light source is incident and which is subjected to the electric field generated by the target, a reference electric field applicator configured to apply an electric field based on a reference signal with a known signal level to the electro-optic crystal, a light receiver configured to receive light emitted from the electro-optic crystal and to convert the received light into an electric signal, and a separation corrector configured to separate the electric signal into a measurement signal based on the electric field generated by the target and the reference signal and to correct a signal level of the measurement signal on the basis of the signal level of the separated reference signal.

Abstract: Electric field communication that adopts a metal as a communication medium is performed. An electric field communication system communicating through an electric field, includes: a communication medium made of a material capable of transmitting the electric field; a first transmitter that generates an electric field dependent on a potential difference between a first electrode, which is disposed on a side of the communication medium and is connected to the communication medium via a coupling capacitance, and a second electrode connected to an earth ground via a coupling capacitance, with the first electrode being connected on a signal side of the transmitter, and the second electrode being connected on a ground side of the transmitter; and a first receiver disposed in contact with the communication medium, wherein the first transmitter and the first receiver communicate with each other through the electric field via the communication medium.

Abstract: Provided is a crystal laminate including: a crystal substrate formed from a monocrystal of group III nitride expressed by a compositional formula InxAlyGa1-x-yN (where 0?x?1, 0?y?1, 0?x+y?1), the crystal substrate containing at least any one of n-type impurity selected from the group consisting of Si, Ge, and O; and a crystal layer formed by a group III nitride crystal epitaxially grown on a main surface of the crystal substrate, at least any one of p-type impurity selected from the group consisting of C, Mg, Fe, Be, Zn, V, and Sb being ion-implanted in the crystal layer. The crystal laminate is configured in a manner such that an absorption coefficient of the crystal substrate for light with a wavelength of 2000 nm when the crystal substrate is irradiated with the light falls within a range of 1.8 cm?1 or more and 4.6 cm?1 or less under a temperature condition of normal temperature.

Abstract: Provided are: a catalyst that is used in a reaction for producing hydrogen from an alkane without emitting CO2; a method of producing hydrogen without emitting CO2 by using the catalyst; and a method of producing ammonia using, as a reducing agent, hydrogen produced using the catalyst. The alkane dehydrogenation catalyst according to the present disclosure contains a graphene having at least one type of structure selected from an atomic vacancy structure, a singly hydrogenated vacancy structure, a doubly hydrogenated vacancy structure, a triply hydrogenated vacancy structure, and a nitrogen-substituted vacancy structure. The graphene preferably has from 2 to 200 of the structure approximately per 100 nm2 of the atomic film of the graphene. In addition, the hydrogen production method according to the present disclosure includes extracting hydrogen from an alkane by using the alkane dehydrogenation catalyst.

Abstract: A rotating machine system includes a rotating machine including coils individually conducted in phases, respectively, an operation direction determination unit to determine an operation direction to a driving direction or a braking direction, a drive coil number determination unit to determine a number of coils in each phase based on a drive operation instruction value when the operation direction is the driving direction, a drive coil selector to select the coils of the number of coils determined from the coils in each phase, a drive controller to conduct the coils selected by the drive coil selector to perform drive control, and a brake controller to perform brake control based on a brake operation instruction value when the operation direction is the braking direction.

Abstract: An electric field sensor includes a light source; an electro-optical crystal, a first separator, a first wavelength plate, first and second light receivers, a differential amplifier, and a controller. The electro-optical crystal has light from the light source incident thereon and receives an electric field generated by an object. The first separator separates light emitted from the electro-optical crystal into a P wave and an S wave. The first wavelength plate changes a phase of light at a pre-stage of the first separator. The first and second light receivers receive the P wave and S-wave light respectively, and convert the received light into first and second electrical signals, respectively. The differential amplifier generates a differential signal between the first and second electrical signals. The controller adjusts a wavelength of the light source such that an output value of a direct-current component of the differential amplifier is within a value range.

Abstract: An electric field sensor which measures an electric field generated by a target utilizing an electro-optic effect, the electric field sensor including a light source, an electro-optic crystal on which light in a predetermined polarization state emitted from the light source is incident and which is subjected to the electric field generated by the target, a reference electric field applicator configured to apply an electric field based on a reference signal with a known signal level to the electro-optic crystal, a light receiver configured to receive light emitted from the electro-optic crystal and to convert the received light into an electric signal, and a separation corrector configured to separate the electric signal into a measurement signal based on the electric field generated by the target and the reference signal and to correct a signal level of the measurement signal on the basis of the signal level of the separated reference signal.

Abstract: A measurement device includes an electric field generator, an electric field detector, a thickness gauge, and a processor. The electric field generator generates an alternating current electric field. The electric field detector detects the alternating current electric field generated by the electric field generator. The thickness gauge measures a thickness of a measurement target in a non-contact manner. The processor derives a calibration curve representing a relationship between a specific dielectric constant and an intensity of an alternating current electric field. The measurement target is insertable between the electric field generator and the electric field detector. The electric field detector detects an intensity of the alternating current electric field attenuated by the measurement target.

Abstract: The three-dimensional modeling device includes a three-dimensional data acquisition unit that acquires three-dimensional data representing a three-dimensional structure with voxels, a discharge mechanism that discharges a laminated material including a plurality of kinds of dyes, and a control unit that controls the discharge mechanism based on the three-dimensional data so as to model the three-dimensional model. One of the voxels is divided into a plurality of elements in each of intersecting three directions, each of the plurality of the elements is provided with color data corresponding to one of a plurality of colors, and the color data of the element is determined such that all of a plurality of surfaces of the voxel has an approximately identical color.

Abstract: Provide are a power reception device, a wearable device, and a non-contact power feeding system that can improve the transmission efficiency while suppressing upsizing of the circuit thereof. A power reception device (3) includes a variable capacitance circuit (100) and a power reception coil (41) constituting a resonance circuit together with the variable capacitance circuit (100), in which the variable capacitance circuit (100) includes a first capacitor (C1) and a second capacitor (C2) connected in parallel to each other, a first switch (Tr1) connected in series to one end side of the first capacitor (C1), and a switch control circuit (110) that controls turning on and off of the first switch (Tr1) and includes a first comparator (OP1) that supplies a first control voltage to the first switch (Tr1) according to a comparison result between a reference voltage and an AC voltage applied to the second capacitor (C2).

Abstract: The objective of the present invention is to provide a carbon-based hydrogen storage material having an autocatalytic capability and an atomic vacancy, wherein the hydrogen storage is a hydrocarbon compound which produces a non-endothermic release or an exothermic release of hydrogen adsorbed in the compound. In addition, the present invention provides a method of manufacturing the material comprising: preparing a hydrocarbon compound as the raw material of the carbon-based hydrogen storage material; setting the raw material in a container having a predetermined gas partial pressure; producing the hydrocarbon compound by ion beam irradiation of the raw material; performing annealing treatment under the predetermined conditions; and exposing the product to the hydrogen under the predetermined conditions, wherein the product is a hydrogen storage hydrocarbon compound producing a non-endothermic or an exothermic release of hydrogen adsorbed thereto with autocatalysis activity.

Abstract: There is provided a gallium nitride laminated substrate including: an n-type gallium nitride layer containing an n-type impurity; a p-type gallium nitride layer provided on the n-type gallium nitride layer, containing a p-type impurity, forming a pn-junction at an interface with the n-type gallium nitride layer, and having a p-type impurity concentration and a thickness such that, when a reverse bias voltage is applied to the pn-junction, a breakdown occurs due to a punchthrough phenomenon before occurrence of a breakdown due to an avalanche phenomenon; and an intermediate level layer provided on the p-type gallium nitride layer, containing a p-type gallium nitride which contains the p-type impurity at a higher concentration than the p-type gallium nitride layer, having at least one or more intermediate levels between a valence band and a conduction band, and configured to suppress an overcurrent resulting from a breakdown due to the punchthrough phenomenon in the p-type gallium nitride layer.

Abstract: Provide are a power reception device, a wearable device, and a non-contact power feeding system that can improve the transmission efficiency while suppressing upsizing of the circuit thereof. A power reception device (3) includes a variable capacitance circuit (100) and a power reception coil (41) constituting a resonance circuit together with the variable capacitance circuit (100), in which the variable capacitance circuit (100) includes a first capacitor (C1) and a second capacitor (C2) connected in parallel to each other, a first switch (Tr1) connected in series to one end side of the first capacitor (C1), and a switch control circuit (110) that controls turning on and off of the first switch (Tr1) and includes a first comparator (OP1) that supplies a first control voltage to the first switch (Tr1) according to a comparison result between a reference voltage and an AC voltage applied to the second capacitor (C2).

Abstract: A semiconductor device is included a first semiconductor layer with n-type conductivity, containing a gallium nitride-based semiconductor, a second semiconductor layer with p-type conductivity, which is laminated directly on the first semiconductor layer and contains a gallium nitride-based semiconductor added with a p-type impurity at a concentration of 1×1020 cm?3 or more, a first electrode disposed in contact with the first semiconductor layer, and a second electrode disposed in contact with the second semiconductor layer, and the semiconductor device functions as a pn-junction diode.

Abstract: Provided is a crystal laminate including: a crystal substrate formed from a monocrystal of group III nitride expressed by a compositional formula InxAlyGa1-x-yN (where 0?x?1, 0?y?1, 0?x+y?1), the crystal substrate containing at least any one of n-type impurity selected from the group consisting of Si, Ge, and O; and a crystal layer formed by a group III nitride crystal epitaxially grown on a main surface of the crystal substrate, at least any one of p-type impurity selected from the group consisting of C, Mg, Fe, Be, Zn, V, and Sb being ion-implanted in the crystal layer. The crystal laminate is configured in a manner such that an absorption coefficient of the crystal substrate for light with a wavelength of 2000 nm when the crystal substrate is irradiated with the light falls within a range of 1.8 cm?1 or more and 4.6 cm?1 or less under a temperature condition of normal temperature.

Abstract: A semiconductor device includes a semiconductor member having a mesa structure in which a first semiconductor layer and a second semiconductor layer are laminated on each other and having a pn junction; an insulating film disposed on a side surface of the mesa structure and on an outside upper surface of the mesa structure; a first electrode connected to the second semiconductor layer on the upper surface of the mesa structure, and extends on the side surface of the mesa structure and on the outside upper surface of the mesa structure on the insulating film; and a second electrode connected to the first semiconductor layer on a lower surface of the first semiconductor layer, and having a capacitance of the insulating film when a reverse bias voltage is applied between the first electrode and the second electrode, so that a first voltage applied to the insulating film between a corner position (a first position) where the side surface of the insulating film disposed on the side surface of the mesa structure an

Abstract: There is provided a semiconductor device, including: a semiconductor member having a mesa structure in which a second semiconductor layer having one of a p-type conductivity type and an n-type conductivity type is laminated on a first semiconductor layer having the other one of the p-type conductivity type and the n-type conductivity type, so that the second semiconductor layer is exposed on an upper surface of the mesa structure, a pn junction interface is exposed on a side surface of the mesa structure, and the first semiconductor layer is exposed on an outside upper surface of the mesa structure; an insulating film disposed on a side surface of the mesa structure and on an outside upper surface of the mesa structure; a first electrode electrically connected to the second semiconductor layer on the upper surface of the mesa structure, and extends on the side surface of the mesa structure and on the outside upper surface of the mesa structure on the insulating film; and a second electrode electrically connec

Abstract: To concentrate metals such as gallium from ore which is extracted from mines or used electronic components while suppressing the quantity of waste liquid generated is difficult. A first solid metal compound which contains a metal selected from a group consisting of gallium, indium, germanium, tellurium, and cesium at a first metal content in a mixture of the first solid metal compound is reduced to form a gaseous metal compound, the gaseous metal compound is oxidized to form a second solid metal compound, and the second solid metal compound is collected at a second metal content which is higher than the first metal content.

Abstract: The objective of the present invention is to provide a carbon-based hydrogen storage material having an autocatalytic capability, and a production method therefor. The present invention provides a carbon-based hydrogen storage material having an atomic defect, which is a hydrogen adsorbing-storing hydrocarbon compound having an autocatalysis reaction, wherefrom hydrogen that has been adsorbed and stored within the compound is either released while no heat is absorbed, or released while heat is generated.

Abstract: A semiconductor device includes a semiconductor member having a mesa structure in which a first semiconductor layer and a second semiconductor layer are laminated on each other and having a pn junction; an insulating film disposed on a side surface of the mesa structure and on an outside upper surface of the mesa structure; a first electrode connected to the second semiconductor layer on the upper surface of the mesa structure, and extends on the side surface of the mesa structure and on the outside upper surface of the mesa structure on the insulating film; and a second electrode connected to the first semiconductor layer on a lower surface of the first semiconductor layer, and having a capacitance of the insulating film when a reverse bias voltage is applied between the first electrode and the second electrode, so that a first voltage applied to the insulating film between a corner position (a first position) where the side surface of the insulating film disposed on the side surface of the mesa structure an