Abstract: The present description concerns a device (100) for testing a resistance-change memory cell (10), comprising: a conductive element (108) adapted to coupling the cell to the device; a generator of signals (102) for writing into and reading from the cell; a first transmission line (104) adapted to coupling the generator and the conductive element to transmit a write signal; a second transmission line (106) adapted to coupling the generator and the conductive element to transmit a read signal; an amplifier (110) comprising a detection resistor (112) positioned on the second transmission line; an acquisition unit (130) coupled to the output of the amplifier; and a switching module (120) adapted to coupling the generator and the conductive element via the first transmission line or via the second transmission line.