Patents Assigned to HRL Laboratories, Inc.
  • Fabrication of low resistance, non-alloyed, OHMIC contacts to INP using non-stoichiometric INP layers
    Patent number: 6583455
    Abstract: A method of reducing the specific contact resistivity of a metal to semiconductor interface between a metal contact and an InP semiconductor compound. The method includes the step of increasing the amount of the group V element (P) in the semiconductor compound so that the semiconductor compound is non-stoichiometric having an excess concentration of the group V element in an amount of at least 0.1% above stoichiometric levels.
    Type: Grant
    Filed: October 19, 2000
    Date of Patent: June 24, 2003
    Assignee: HRL Laboratories, Inc.
    Inventors: Miroslav Micovic, Daniel P. Docter