Abstract: An image sensor includes an array of pixels formed in a semiconductor substrate. The pixels are grouped as a center portion of pixels and an outer portion of pixels. A first set of micro-lenses is formed over each of the pixels in the center portion of pixels. A second set of micro-lenses is formed over each of the pixels in the outer portion of pixels. The second set of micro-lenses differ from said first set of micro-lenses. In one embodiment, the second set of micro-lenses are taller than the first set of micro-lenses.
Abstract: An image sensor die formed on a wafer is disclosed. The image sensor die comprises a plurality of pixels formed in a semiconductor substrate, each pixel including a light sensitive element. Further, a dummy pattern is formed on the image sensor die, wherein the dummy pattern comprises ridges of a dummy pattern material that is operative to evenly distribute a micro-lens material over said wafer.