Abstract: A dense-pitch small-pad copper wire bonded double IC chip stack package comprises a plastic package body, in which a lead frame carrier and a frame lead inner pin are arranged; the upper surface of the lead frame carrier is fixedly connected with a first IC chip; a second IC chip is stacked on the first IC chip; the upper surface of the first IC chip and the upper surface of the second IC chip are respectively provided with a plurality of pads which are arranged as two lines of pad groups in parallel; the two pad groups are respectively a first pad group and a second pad group; a metal ball is implanted on each pad; each metal ball is connected with a first copper bonding ball; and a third copper bonding wire is formed by looping and arching on a corresponding metal ball between the second IC chip and the first IC chip.

Abstract: The present invention discloses a quad flat no lead package and a production method thereof. The quad flat no lead package comprises a lead frame carrier consisting of a carrier pit and three circles of leads arranged around the carrier pit, wherein the three circles of leads respectively consist of a plurality of leads that are disconnected mutually; an IC chip is adhered in the carrier pit; and an inner lead chemical nickel and porpezite plated layer is plated on all the leads; the inner lead chemical nickel and porpezite plated layer is arranged in the same direction as the IC chip; the IC chip is connected with the inner lead chemical nickel and porpezite plated layer through a bonding wire; and the IC chip, the ends of all the leads plated with the inner lead chemical plating nickel and palladium metal layers and the bonding wire are all packaged in a plastic package.

Abstract: The present invention discloses a quad flat no lead package and a production method thereof. The quad flat no lead package comprises a lead frame carrier consisting of a carrier pit and three circles of leads arranged around the carrier pit, wherein the three circles of leads respectively consist of a plurality of leads that are disconnected mutually; an IC chip is adhered in the carrier pit; and an inner lead chemical nickel and porpezite plated layer is plated on all the leads; the inner lead chemical nickel and porpezite plated layer is arranged in the same direction as the IC chip; the IC chip is connected with the inner lead chemical nickel and porpezite plated layer through a bonding wire; and the IC chip, the ends of all the leads plated with the inner lead chemical plating nickel and palladium metal layers and the bonding wire are all packaged in a plastic package.