Abstract: The present application discloses a Schottky barrier diode device and a manufacturing method therefor. The Schottky barrier diode device comprises an epitaxial wafer having an epitaxial layer. The epitaxial layer comprising a first surface and a second surface that are opposite to each other, and the first surface being provided with a functional region and trench regions located on both sides of the functional region; multi-level trenches located in the trench regions, each of the multi-level trenches comprising: multiple sub-trenches, the multiple sub-trenches successively comprising a first-level sub-trench to an Nth-level sub-trench in a first direction; the width of the sub-trenches in the same multi-level trench being sequentially increased in the first direction. The side wall of at least the first-level sub-trench being provided with a side wall protection structure.

Abstract: A SiC MOSFET device and a method for manufacturing the same. The SiC MOSFET device comprises: an epitaxial wafer comprising a semiconductor substrate and epitaxial layers on a surface of the semiconductor substrate; and a well region, a source region, and a trench gate, which are in the epitaxial layers. The trench gate comprises a gate disposed in a trench at a surface of the epitaxial layers. The source region surrounds the trench. The well region comprises a first layer, a second layer, and a third layer. A bottom of the trench is disposed higher than the first layer and lower than the third layer. The third layer surrounds the trench. Doped region(s) are disposed in the epitaxial layers and beneath the trench, and the first layer surrounds each doped region. A shielding layer is disposed in a part of the epitaxial layers beneath the trench.

Abstract: The present application discloses a silicon carbide semiconductor device and a manufacturing method therefor. An epitaxial wafer comprises a semiconductor substrate; a first epitaxial layer provided on the surface of the semiconductor substrate; al second epitaxial layer provided on the surface of the side of the first epitaxial layer facing away from the semiconductor substrate; and a third epitaxial layer provided on the surface of the side of the second epitaxial layer facing away from the first epitaxial layer. A gate is formed by means of a trench formed in the third epitaxial layer, and ion implantation can also be performed in the second epitaxial layer on the basis of the trench before the gate is formed, such that a doped region inverted with the second epitaxial layer is formed in the second epitaxial layer.