Abstract: A micro light emitting diode chip and a method for forming the same, the micro light emitting diode chip includes a first light emitting part including several first pixel structures, each of which emits light with a first wavelength; and a second light emitting part including several second pixel structures, each of which emits light with a second wavelength different from the first wavelength; the first light emitting part and the second light emitting part are connected by bonding, and the first pixel structures and the second pixel structures corresponding thereto are provided relative to each other along a stacking direction of components. With light emitting pixel structures emitting light with different wavelengths being integrated into a same chip, stacking of pixel structures of different colors can be completed at a same chip end, which can effectively reduce a volume of chips of different colors which are used in combination.

Abstract: A full color micro LED structure is disclosed. The micro LED structure comprises an IC back plane, at least three mesa structures stacked along a vertical axis, and a final conductive layer formed above the at least three mesa structures. The layers may have cut-outs to accommodate vias so that the structure may have a small footprint. Multiple micro LED structures may create an array by connecting their final conductive layer, forming a trench between the adjacent micro LED structures.

Abstract: A micro-LED chip includes micro-mesas; each micro-mesa includes: a light-emitting layer, and two types of semiconductor layer; a bottom metal layer located at the bottom of the micro-mesa; a bottom dielectric layer with a trench located at the bottom of the bottom metal layer; a first bottom contact hole located in the bottom dielectric layer and located at the bottom of the bottom metal layer, and the first bottom contact hole is in contact with the bottom metal layer; a sidewall dielectric layer located on sidewalls of the micro-mesa and t the bottom metal layer; a top conductive layer continuously covering of the micro-mesa, the sidewall dielectric layer, and the area between adjacent micro-mesas; and a second bottom contact structure located in the trench and within the bottom dielectric layer between adjacent micro-mesas, the second bottom contact structure is not in contact with the bottom metal layer.

Abstract: Embodiments of the present disclosure provide a method for correcting a micro polychrome light emitting device, including: obtaining a rotational compensation between a first display and a second display of the micro polychrome light emitting device, a first image rendered by the first display being rotatable according to the rotational compensation to align with a second image rendered by the second display; determining, based on the rotational compensation, a regional segmentation scheme and a shift compensation scheme for the first image; and correcting a rotational offset between the first display and the second display by segmenting the first image into regions based on the regional segmentation scheme and shifting each of the regions of the first image according to the shift compensation scheme.

Abstract: A light-emitting mesa for a micro-LED, a method for forming the same and a micro-LED chip are provided. The light-emitting mesa includes: a transparent conductive layer, arranged on a side of the light-emitting mesa facing away from the light extraction side; a first epitaxial layer, arranged between the transparent conductive layer and a light-emitting layer; a light-emitting layer, arranged between the first epitaxial layer and a second epitaxial layer and configured to emit light; and a second epitaxial layer, arranged on a side of the light-emitting mesa facing the light extraction side. An area of the second epitaxial layer is greater than an area of the first epitaxial layer. A side surface of the light-emitting mesa has an inclined surface. An inclination angle of the inclined surface is 55° to 75°.

Abstract: The present invention provides an epitaxial wafer with a dummy light-emitting mesa, including: a temporary substrate; a light-emitting mesa arranged on the temporary substrate, which includes: a bottom transparent conductive layer arranged on a side of the light-emitting mesa facing away from the temporary substrate; a first epitaxial layer arranged between the bottom transparent conductive layer and a light-emitting layer; a light-emitting layer arranged between the first epitaxial layer and a second epitaxial layer and configured to emit light; and a second epitaxial layer arranged on a side of the light-emitting mesa facing the temporary substrate, wherein the area of the upper surface of the light-emitting mesa facing the temporary substrate is greater than the area of the lower surface facing away from the temporary substrate.

Abstract: The present disclosure provides a test positioning method for a display. A target image with a plurality of first positioning points and a plurality of second positioning points having different shapes and/or dimensions, with second points at predetermined positions is displayed and captured. The second positioning points in the first captured image are determined by a homography matrix based on their predetermined and actual positions. The positioning points are transformed using the matrix to obtain a mapping point set, thereby improving test positioning accuracy and user experience. The present disclosure also provides a test positioning device for a display.

Abstract: A micro-display system comprises a shared transmission line and a plurality of micro-display panels. Each panel includes: a flag lead configured to transmit signals to a host when driven to a high level; a PMOS transistor connected with the flag lead to drive the flag lead to the high level when conducting; a pull-down resistor grounded at one end and connected to the flag lead at the other end to pull the flag lead to a low level when the PMOS transistor is not conducting; and a signal circuit module. The signal circuit module generates a control signal upon receiving a turn-on instruction from the host, and sends a low level signal to conduct the PMOS transistor when generating a flag signal. The shared transmission line connects the host to the flag leads of the plurality of micro-display panels.

Abstract: An exemplary micro light-emitting diode (LED) structure includes: a bottom epitaxial layer of a first conductive type; a light-emitting layer, formed on the bottom epitaxial layer; and a top epitaxial layer of a second conductive type. The top epitaxial layer is formed on the light-emitting layer and comprises an array of first grooves dividing the top epitaxial layer into an array of micro LEDs. Each of the first grooves comprises a first sub-groove.

Abstract: A micro-light emitting diode (LED) chip includes a substrate and a plurality of micro-LEDs formed above the substrate. At least one of the plurality of micro-LEDs includes a bottom metal layer formed above the substrate, a light emitting layer formed above the bottom metal layer, an insulating layer above the light emitting layer and the bottom metal layer and including an opening exposing the light emitting layer, and a transparent conductive layer above the insulating layer and electrically contacting the light emitting layer via the opening of the insulating layer.

Abstract: A full color micro LED structure is disclosed. The micro LED structure comprises an IC back plane, at least three mesa structures stacked along a vertical axis, and a top contact formed above the at least three mesa structures. The second mesa structure comprises two connecting layers, a reflection layer, and a light emitting layer. The third mesa structure comprises a bonding layer, a reflection layer, a light emitting layer, and a connecting layer.

Abstract: The present disclosure provides a micro-LED, including: a light-emitting mesa configured to emit light; and a reflective mirror layer configured to reflect light from the light-emitting mesa, wherein a side of the reflective mirror layer facing the light-emitting mesa has an atomic layer deposition layer, and the atomic layer deposition layer is configured to block metal diffusion in the reflective mirror layer. Through the present disclosure, metal diffusion and oxidation in the reflective mirror layer can be effectively suppressed.

Abstract: The present disclosure relates to a global scanning method with offset and a micro-display system, and the global scanning method with offset includes: dividing multiple rows of micro-LEDs of at least one micro-display panel into a plurality of display groups, each display group including one or more rows of micro-LEDs; determining a scanning offset duration between adjacent display groups; and scanning sequentially the plurality of display groups of the at least one micro-display panel according to the scanning offset duration. Using the global scanning method with offset of the present disclosure, the number of micro-LEDs illuminated simultaneously is reduced, and the distribution of current is more uniform in time and space, thus local concentration of peak current is avoided, and the voltage drop generated during scanning is reduced, so that the service life of the micro-display panel can be improved and the stability of the display system is improved.

Abstract: The present disclosure relates to a hybrid bonding-based micro-LED chip, including: an upper stacked layer, which includes: a first insulating layer configured to accommodate a light-emitting mesa and a first through-hole contact portion; a light-emitting mesa configured to emit light, wherein the top surface area of the light-emitting mesa is greater than the bottom surface area of the light-emitting mesa; and a first through-hole contact portion electrically connected with the bottom of the light-emitting mesa and passing through the first insulating layer; and a lower stacked layer, which includes: a second insulating layer configured to accommodate a second through-hole contact portion; a second through-hole contact portion passing through the second insulating layer; and a drive backplane electrically connected with the second through-hole contact portion, wherein the lower stacked layer is bonded with the upper stacked layer through hybrid bonding.

Abstract: Disclosed is a micro-display panel, which includes a substrate, a micro-LED display chip, a fluorescent layer, and a package layer. The micro-LED display chip is located on the substrate, and the edge of the micro-LED display chip has metal pads, and the metal pads are electrically connected with the area of the substrate that is not covered by the micro-LED display chip, and the fluorescent layer is located on the surface of the micro-LED display chip, and the package layer covers the exposed area of the substrate and the area where the micro-LED display chip is electrically connected with the substrate.

Abstract: The present disclosure provides a through-hole contact portion for a micro-LED, wherein the through-hole contact portion is configured to electrically connect a first conductive structure with a second conductive structure, wherein the first conductive structure is located below the through-hole contact portion and the second conductive structure is located above the through-hole contact portion, wherein the through-hole contact portion includes: a through-hole formed in an insulating layer and having a hollow cavity; filling metal arranged in the hollow cavity of the through-hole for conducting electricity; and a first metal barrier layer arranged between the bottom of the through-hole and the first conductive structure and/or between the top of the through-hole and the second conductive structure to block diffusion of the filling metal. Furthermore, the present disclosure also provides a method for forming the through-hole contact portion.

Abstract: Disclosed is a microlens for a micro-LED, including: a spacer portion arranged between a light-emitting mesa of the micro-LED and a lens portion to adjust the position of the focal point of the lens portion relative to the light-emitting mesa; and a lens portion arranged on the spacer portion to shape light from the light-emitting mesa, where the diameter of the upper surface of the light-emitting mesa facing the microlens is n, the spherical height of the lens portion is a x n, the radius of curvature is m, the height of the spacer portion is b x n, and the width of the spacer portion is c x n, wherein a, b, c, m, and n are all positive numbers, wherein: 1.2 ? a ? 1.6; 0.2 ? b ? 0.3; 0.9 ? c ? 1.3; and 1.3 ?m ? m ? 1.8 ?m.

Abstract: The present disclosure discloses a micro-LED display chip including a light-emitting area, a metal layer, and a shielding layer, wherein the light-emitting area includes a micro-LED array, wherein the micro-LED array includes a plurality of micro-LEDs, and the metal layer is located at the periphery of the micro-LED array, and at least a part of the metal layer is electrically connected with the micro-LED array, and the shielding layer is located on the surface of or above at least a part of the metal layer. By arranging the shielding layer, light emitted from the light-emitting area can be reflected after being reflected by the outside and reaching the surface of the shielding area, so as to effectively improve the display quality of the image.

Abstract: The present disclosure relates to a reflective mirror layer for a micro-LED, and the reflective mirror layer is configured to reflect light from the light-emitting mesa toward the light extraction side, and the area of the upper surface of the light-emitting mesa facing the light extraction side is greater than the area of the lower surface facing away from the light extraction side, wherein the reflective mirror layer includes: a main body portion arranged to cover the lower surface of the light-emitting mesa and surround the side surface of the light-emitting mesa; and an edge portion connected with the edge of the main body portion and forming an angle greater than 0° with the main body portion, wherein the edge portions of the reflective mirror layers of adjacent micro-LEDs are disconnected from each other. The present disclosure also relates to a method for manufacturing the reflective mirror layer.

Abstract: Disclosed herein is a micro-display chip including a light-emitting area and a non-light-emitting area, wherein the non-light-emitting area is arranged around the light-emitting area and includes a package layer, wherein the surface of the package layer includes a plurality of rough structures. Etching and roughening the surface of the package layer can reduce its reflectivity, so that the light emitted from the light-emitting area is diffusely reflected after being reflected by the outside and reaching the surface of the package area, which can effectively reduce the re-reflection of full-band light and improve the quality of image display.