Abstract: An electrically energizable high intensity, radiant energy heater (8) having a general M-shape for providing a pocket (20) for localized high intensity isothermal heating for fusion and fiber processing. The heater is shaped to provide easy access for a fiber (18) at an entry (16) to enable insertion of the fiber into the isothermal high temperature zone in pocket (20). A second re-entrant wall external to the pocket provides radiant shielding and buffers the isothermal heating zone from the cool environment. The heater may be constructed from a ribbon of a resistively heated metal, such as platinum foil.

Abstract: A method for designing low loss cylindrical TE.sub.011 mode resonators which permits selective placement of a transmission null at a frequency near the TE.sub.011 resonance frequency. The frequencies of the TE.sub.211 and TE.sub.311 modes, that are naturally excited in the resonator, are controlled by the angular displacement of the resonator input port and output port and by the relative amplitude of the TE.sub.011 mode compared to the TE.sub.211 and TE.sub.311 modes. Proper placement of the transmission nulls improves the selectivity of the TE.sub.011 resonator, and/or can be used to filter out unwanted noise at the frequency of the transmission null. A lumped constant analog circuit model is presented to assist in design of the resonator.

Abstract: The auto-zeroing technique of this invention comprises two steps. In the first step, the differential amplifier output and negative input are shorted together and the resulting amplifier offset output voltage is stored across an input capacitor and a feedback capacitor, the input capacitor being connected between the amplifier negative input and a voltage source to be sampled and the feedback capacitor being connected between the amplifier negative input and ground. In the second step, the direct connection between the amplifier output and negative input is removed and the feedback capacitor is reconnected between the amplifier output and negative input in a feedback loop. At this time, a voltage of the same magnitude and opposite polarity as the original amplifier offset output voltage is applied as negative feedback across the amplifier, so that the amplifier offset output voltage is precisely zeroed. In an alternative embodiment, the connection and reconnection steps are performed at a frequency f.sub.

Abstract: In a charge transfer device imager, photodetector output current is accumulated and stored during an integration period in an analog potential well in the substrate surface potential adjacent the photodetector, the analog well being reset each time the detector changes the amount of stored charge by a preselected fraction of the storing well capacity, simultaneously incrementing a digital count. At the end of each integration period, both the contents of the analog well and the digital count are read into an output register. As a result, the length of the integration period may be significantly extended without regard to the charge storing capacity of the charge transfer device, thus improving the signal-to-noise ratio and the dynamic range of the imager. In the preferred embodiment, the amount of charge stored in the analog potential well is sensed by sensing the potential of the photodetector, where the photodetector comprises a diode diffusion in the substrate.

Abstract: As CCD circuit for restoring to a common DC level, data received from a plurality of detector channels of a scanned array so as to overcome the effect of variations in detector parameters and other non-uniformities in the circuit. The DC correction value is established during retrace time by storing a representative time integrated data charge packet when energy from a cold reference surface is being applied to the detectors. During the scan time of the field of view by the detectors the representative charge packet is utilized to provide a DC restoration or correction charge to each data charge packet received from the detectors. The system thus standardizes to a common DC level, the output data from a plurality of channels.

Abstract: Defects in the metal step coverage of a thin film semiconductor device are removed by annealing the metal layer with a pulsed electron beam.