Abstract: A light bar, a backlight module and a liquid crystal display are provided. The backlight module includes the light bar and a backplane, the light bar includes a PCB, a plurality of LED chips arranged on a surface of the PCB and a protrusion arranged on the other surface of the PCB, and the backplane includes a baseboard defining a through groove. The protrusion on the PCB is inserted into the through groove of the backplane to facilitate heat conduction. In this way, heat generated by the LED chips could be conducted out quickly.

Abstract: The present disclosure discloses a display device and a manufacturing method thereof. The display device is provided with a chip-on-film package and a sealant in a wiring area of the display device, with first surface of the chip-on-film package connected to the active area of the display device to provide a driving signal to the active area, and the second surface of the chip-on-film package provided with a concave-convex structure, a sealant covering the concave-convex structure of the chip-on-film package.

Abstract: The present disclosure relates to a quantum dot (QD) lamp and a display. The QD lamp includes an elongated glass tube having two closed ends. The elongated glass tube includes an LED light bar, two ends of the LED light bar respectively are configured with one electrode, and the electrode respectively are protruding from the two ends of the glass tube. An inner wall or an outer wall of the glass tube are coated with QD phosphors. The LED light bar includes a circuit substrate, a plurality of LED chips disposed on the circuit substrate, and a silica gel layer configured to encapsulate the LED chips on the circuit substrate.

Abstract: Provided are a quantum dot light emitting diode and a manufacturing method. The quantum dot light emitting diode comprises: a pair of electrodes, arranged side by side and spaced; a flip chip light emitting diode, disposed on the electrodes and electrically connected to the electrodes; a quantum dot interlayer, disposed on the flip chip light emitting diode; a package layer, covering the electrodes, the flip chip light emitting diode and the quantum dot interlayer; and a whitening adhesive layer, surrounding the package layer. The quantum dot interlayer is disposed to isolate the invasion of the external water and oxygen to the quantum dot layer and the light emitting diode chip to form an environment, in which the quantum dots are isolated from water and oxygen.

Abstract: The present disclosure discloses a display device and a mechanism thereof, the wall-mounted heat dissipation mechanism includes: a heat dissipation plate including a longitudinal plate and a transverse plate bended to each other, a LED light bar attached to an inner surface of the longitudinal plate, the transverse plate is arranged opposite to a back surface of the light guide plate; a hanger including a first hanger fixed on a hanging wall and two second hangers respectively fixed on two ends of the first hanger at intervals, the second hanger is configured to detachably connect with the heat dissipation plate; and a heat dissipation mechanism fixed on the first hanger and disposed between the two second hangers, the heat dissipation mechanism being in surface contact with a back surface of the heat dissipation plate. The bulky part of the mechanism is integrated into the hanger structure of the display device.

Abstract: The disclosure provides a backlight module includes a light guide plate and a light source device configured to provide light to the light guide plate. The light source device includes a circuit board and a LED lamp electrically connected to the circuit board. The LED lamp is external to the light guide plate and at a lateral surface of the light guide plate. The circuit board is parallel to the light guide plate with a portion pressed on another lateral surface of the light guide plate. The disclosure provides a display device includes a frame and a liquid crystal display screen and the backlight module installed on the frame. The reflective film and the circuit board share a part of room for thickness, so the thickness of the backlight module is reduced and the module is thinned.

Abstract: The present disclosure provides a low-reflection composite electrode including a first metal layer, a first transparent material layer and a second metal layer and a TFT array substrate using the same. The first metal layer, the first transparent material layer and the second metal layer are sequentially stacked. The low-reflection composite electrode has an extremely low reflection rate. In addition, the average reflection rate of the low-reflection composite electrode is lower than 3%, and even lower than 1% within the green light band. If the TFT array substrate is used in AM-OLED and AM-LCD, the gate and/or the source/drain of the TFT array substrate are the low-reflection composite electrodes, so the polarizer in the AM-LED and the low-reflection coating in the AM-LCD become unnecessary. Thus, the production cost can be reduced and the products can have its superiority.

Abstract: The present disclosure relates to a direct-type backlight module and a liquid crystal display the direct-type backlight module includes a back frame, a backlight source, optical films and the elastic rope. The install pillars are arranged on the first edge and the second edge opposite to the first edge of the back frame. The backlight source is arranged within the back frame. The elastic rope and the install pillars cooperatively defines the supporting net opposite to the backlight source. The optical films are arranged on the supporting net, and thus may be supported by the supporting net. In this way, the optical films may be prevented from collapse, so as to exclude the diffusion plate. Not only the cost of the manufacturing process may be reduced, and the thin design of the backlight module may be realized.

Abstract: The present disclosure relates to a quantum dot (QD) light emitting diode (LED), a backlight module, and a display. The QD LED includes a support; an LED chip; at least one optical fiber layer; and a packaging layer; wherein: the LED chip is fixed and connected with the support; the at least one optical fiber layer is disposed on the LED chip, and the at least one optical fiber layer includes optical fibers encapsulated with QDs; and the packaging layer encapsulates the at least one optical fiber layer and the chip on the support.

Abstract: A quantum dot LED and a manufacturing method for the same are disclosed. The quantum dot LED includes a pair of electrodes disposed separately and side by side; an LED chip disposed on the pair of electrodes and electrically connected to the pair of electrodes; a quantum dot layer disposed on the LED chip; a glue layer disposed on the quantum dot layer; and an inorganic encapsulation layer that packages and covers the pair of electrodes, the LED chip, the quantum dot layer and the glue layer. The present invention can provide a water and oxygen isolation environment, which is beneficial to increase the luminous efficiency and life of the quantum dots. Adopting an atomic layer deposition method to form the inorganic encapsulation layer, the surface is smooth and even in thickness, the problem of cracking of the film layer will not generate.

Abstract: The present disclosure provides a liquid crystal display panel and a liquid crystal display device. The liquid crystal display panel includes a first polarizer, a first liquid crystal cell in an in-plane switching (IPS) mode, and a second polarizer sequentially stacked on one another. The liquid crystal display panel further comprises a second liquid crystal cell disposed between the first liquid crystal cell and the second polarizer. At the dark state, the second liquid crystal cell blocks a light leaking from the first liquid crystal cell.

Abstract: A liquid crystal display device and its display panel are provided. The display panel includes a first substrate, a second substrate, a PDLC layer and a plurality of gridwall structures. The first substrate and the second substrate are opposite to each other. The PDLC layer and the plurality of gridwall structures are located between the first substrate and the second substrate. The plurality of gridwall structures are spaced from each other and disposed in the PDLC layer. Each gridwall structure includes a transparent gridwall and a film structure covering the surface of the transparent gridwall. The refractivity of any two adjacent film layers of the first to Nth are different, and the reflectivity of one surface of the film structure facing the transparent gridwall is higher than the reflectivity of one surface of the film structure facing away from the transparent gridwall.

Abstract: Provided is a high thermal conductivity quantum dot light emitting diode, comprising a bracket, an light emitting diode chip fixed on the bracket and connected with the bracket and a silicon colloidal body located on an upper side of the light emitting diode chip; wherein an inorganic film package layer is wrapped outside the silicon colloidal body, and the inorganic thin film package layer fixes the silicon colloidal body and the light emitting diode chip; wherein a plurality of quantum dots and a plurality of high thermal conductivity parts are dispersed in the silicon colloidal body. The issue that the quantum dots are damaged due to the high temperature or the water and oxygen environment is solved by using the mixture of high thermal conductivity materials and quantum dots and the enclosed structure.

Abstract: Provided is a white light emitting diode, comprising a substrate, and a blue chip, a light emitting layer and an inorganic protective layer, which are sequentially disposed on the substrate, wherein a material of the light emitting layer comprises green phosphor powder, red quantum dots and a disperse medium, and the green phosphor powder comprises ?-AlON:Mn2+, Mg2+ green phosphor powder. The color gamut of white light emitting diode obtained by using ?-AlON:Mn2+, Mg2+ green phosphor powder with high color gamut, narrow half width, and slow luminance decay can reach BT.2020 80% or more, which is equivalent to the use of green quantum dots. It meets the requirements of high color gamut while reducing the use of green quantum dot materials. The reliability of white light emitting diode is improved to reduce production costs and achieve environmental protection.