Patents Assigned to HUNETPLUS CO., LTD.
  • Method for fabricating nano-patterned substrate for high-efficiency nitride-based light-emitting diode
    Patent number: 9246050
    Abstract: Provided is a method of manufacturing a substrate for a light emitting diode including a convex section forming step and a crystallization/crystallizing step. According to the method and the substrate for the light emitting diode, light extraction is significantly improved and nano to micron sized pattern, economically formed.
    Type: Grant
    Filed: April 17, 2013
    Date of Patent: January 26, 2016
    Assignee: HUNETPLUS CO., LTD.
    Inventors: Hyuk-Jin Cha, Heon Lee, Eun-Seo Choi