Patents Assigned to Hynix Semiconcuctor Inc.
  • Doping method for semiconductor device
    Patent number: 8232187
    Abstract: A doping method for a semiconductor device includes forming a trench in a semiconductor substrate, forming a doped layer doped with a dopant over the undoped layer, and forming a doped region into which the dopant is diffused, wherein the doped region is a portion of the semiconductor substrate in contact with the doped layer.
    Type: Grant
    Filed: July 7, 2010
    Date of Patent: July 31, 2012
    Assignee: Hynix Semiconcuctor Inc.
    Inventor: Won-Kyu Kim