Patents Assigned to HYNIX SEMICONDUCTR INC.
  • Photomask for Extreme Ultraviolet Lithography and Method for Fabricating the Same
    Publication number: 20100167181
    Abstract: A photomask for extreme ultraviolet (EUV) lithography includes: a substrate; a reflection layer disposed over the substrate and reflecting EUV light incident thereto; and an absorber layer pattern disposed over the reflection layer to expose a portion of the reflection layer and comprising a material having an extinction coefficient (k) to EUV radiation higher than that tantalum (Ta).
    Type: Application
    Filed: June 25, 2009
    Publication date: July 1, 2010
    Applicant: HYNIX SEMICONDUCTR INC.
    Inventor: Yong Dae Kim