Patents Assigned to HYNIX SIMICONDUCTOR INC.
  • Nonvolatile Memory Device and Fabrication Method Thereof
    Publication number: 20100015758
    Abstract: A nonvolatile memory device and a method for its fabrication may ensure uniform operating characteristics of ReRAM. The ReRam may include a laminated resistance layer that determines phase of ReRAM on an upper edge of a lower electrode for obtaining a stable threshold drive voltage level.
    Type: Application
    Filed: September 25, 2009
    Publication date: January 21, 2010
    Applicant: HYNIX SIMICONDUCTOR INC.
    Inventor: Tae Hoon Kim