Patents Assigned to Hyogo Prefecture
-
Patent number: 9449844Abstract: An etching method for anisotropically etching a Cu film on a substrate surface includes providing a substrate having a Cu film on a surface thereof in a chamber and supplying an organic compound into the chamber while setting the inside of the chamber to a vacuum state and irradiating an oxygen gas cluster ion beam to the Cu film. The etching method further includes oxidizing Cu or the Cu film to a copper oxide by oxygen gas cluster ions in the oxygen gas cluster ion beam and anisotropically etching the Cu film by reacting the copper oxide and the organic compound.Type: GrantFiled: September 21, 2012Date of Patent: September 20, 2016Assignees: TOKYO ELECTRON LIMITED, HYOGO PREFECTUREInventors: Kenichi Hara, Isao Yamada, Noriaki Toyoda, Takashi Hayakawa
-
Patent number: 9334559Abstract: The present invention provides a Cu—In—Ga—Se powder containing Cu, In, Ga and Se in which cracks do not occur during sintering or processing, and a sintered body and sputtering target, each using the same. The present invention relates to a powder containing Cu, In Ga and Se, which contains a Cu—In—Ga—Se compound and/or a Cu—In—Se compound in an amount of 60 mass % or more in total. The powder of the present invention preferably contains an In—Se compound in an amount of 20 mass % or less and/or a Cu—In compound in an amount of 20 mass % or less.Type: GrantFiled: June 27, 2011Date of Patent: May 10, 2016Assignees: KOBELCO RESEARCH INSTITUTE, INC., HYOGO PREFECTUREInventors: Masaya Ehira, Akira Nambu, Shigeo Kashiwai, Masafumi Fukuzumi
-
Publication number: 20140083976Abstract: A cluster beam generating method that generates a cluster beam includes steps of mixing a gas source material and a liquid source material in a mixer; supplying a cluster beam including clusters originating from the gas source material and clusters originating from the liquid source material that are mixed in the mixer from a nozzle; and adjusting a temperature of the nozzle using a temperature adjusting portion that adjusts a temperature of the nozzle, thereby controlling a ratio of the clusters originating from the gas source material and the clusters originating from the liquid source material in the cluster beam.Type: ApplicationFiled: November 29, 2013Publication date: March 27, 2014Applicants: Tokyo Electron Limited, HYOGO PREFECTUREInventors: Noriaki TOYODA, Isao YAMADA, Masaki NARUSHIMA
-
Patent number: 8510125Abstract: A disease-symptom-combination DB storing information obtained by combining each of disease name elements indicative of diseases with one or more symptom elements each indicative of a symptom, and a disease-care-combination DB storing information obtained by combining each of the disease name elements with a plurality of care elements each indicative of a care are stored in a storing unit. A server control unit recognizes one or more symptom elements from the symptom information and detects one disease name element combined with all of the symptom elements from the disease-symptom-combination DB. Further, a plurality of care elements combined with the one disease name element are detected from the disease-care-combination DB. Disease care information obtained by combining the one disease name element with the plurality of care elements is generated and visibly output in a display unit.Type: GrantFiled: October 16, 2007Date of Patent: August 13, 2013Assignees: Konica Minolta Medical & Graphic, Inc., Hyogo PrefectureInventors: Kosuke Sasai, Akane Hashiya, Masumi Azuma, Kyoko Ishigaki, Hiroshi Inada
-
Publication number: 20130098758Abstract: The present invention provides a Cu—In—Ga—Se powder containing Cu, In, Ga and Se in which cracks do not occur during sintering or processing, and a sintered body and sputtering target, each using the same. The present invention relates to a powder containing Cu, In Ga and Se, which contains a Cu—In—Ga—Se compound and/or a Cu—In—Se compound in an amount of 60 mass % or more in total. The powder of the present invention preferably contains an In—Se compound in an amount of 20 mass % or less and/or a Cu—In compound in an amount of 20 mass % or less.Type: ApplicationFiled: June 27, 2011Publication date: April 25, 2013Applicants: HYOGO PREFECTURE, KOBELCO RESEARCH INSTITUTE, INC.Inventors: Masaya Ehira, Akira Nambu, Shigeo Kashiwai, Masafumi Fukuzumi
-
Publication number: 20130075248Abstract: Art etching method for anisotropically etching a Cu film on a substrate surface includes providing a substrate having a Cu film on a surface thereof in a chamber and supplying an organic compound into the chamber while setting the inside ox the chamber to a vacuum state and irradiating an oxygen gas cluster ion beam to the Cu film. The etching method further includes oxidizing Cu or the Cu film to a copper oxide by oxygen gas cluster ions in the oxygen gas cluster ion beam and anisotropically etching the Cu film by reacting the copper oxide and the organic compound.Type: ApplicationFiled: September 21, 2012Publication date: March 28, 2013Applicants: HYOGO PREFECTURE, TOKYO ELECTRON LIMITEDInventors: TOKYO ELECTRON LIMITED, HYOGO PREFECTURE
-
Publication number: 20120125889Abstract: A cluster beam generating apparatus that generates a cluster beam includes a mixer that mixes a gas source material and a liquid source material; a nozzle that supplies a cluster beam including clusters originating from the gas source material and the liquid source material that are mixed in the mixer; and a temperature adjusting portion that adjusts a temperature of the nozzle, thereby controlling a ratio of the clusters originating from the gas source material and the clusters originating from the liquid source material in the cluster beam.Type: ApplicationFiled: May 23, 2011Publication date: May 24, 2012Applicants: Tokyo Electron Limited, HYOGO PREFECTUREInventors: Noriaki TOYODA, Isao Yamada, Masaki Narushima
-
Publication number: 20120128892Abstract: A disclosed surface processing method includes a first processing step, wherein a gas cluster beam is generated from a source material that does not contain nitrogen, and irradiated to a member to be processed, and a second processing step, wherein a nitrogen gas cluster beam is generated and irradiated to the member to be processed.Type: ApplicationFiled: May 24, 2011Publication date: May 24, 2012Applicants: Tokyo Electron Limited, HYOGO PREFECTUREInventors: Noriaki TOYODA, Isao Yamada, Masaki Narushima, Masayuki Harashima, Eisuke Morisaki
-
Patent number: 8168946Abstract: A charged particle separation apparatus that separates ionized gas clusters is disclosed. The charged particle separation apparatus includes an electric field applying part including two electrodes across which electric voltage is applied in order to generate electric field between the two electrodes thereby deflecting a trajectory of the ionized gas cluster, the electrodes including one of an opening and a void; and a plate opening that allows the ionized gas cluster whose trajectory is deflected by the electric field applying part to go therethrough.Type: GrantFiled: June 16, 2010Date of Patent: May 1, 2012Assignees: Tokyo Electron Limited, Hyogo PrefectureInventors: Masaki Narushima, Koichi Mori, Isao Yamada, Noriaki Toyoda
-
Publication number: 20110148006Abstract: A fiber-producing apparatus includes a storage tank for storing a melt of a source material, an electric storage tank heater, a non-contact thermometer for the melt, a temperature control section which between the electric heater and its power supply, which controls the electric heater based on measurement results obtained from the non-contact thermometer to adjust the temperature of the melt, a nozzle for ejecting the melt in the storage tank, a collector for collecting a fiber, a voltage generator for electrifying the melt, and an insulating transformer disposed between the temperature control section and the electric heater. Since a closed circuit is formed by the electric heater, the electric heater power supply, the temperature control section, and the insulating transformer disposed therebetween, no high-voltage current flows into the electric heater power supply or the temperature control section. This allows stable spinning to be readily performed without breaking the apparatus.Type: ApplicationFiled: August 7, 2009Publication date: June 23, 2011Applicants: JFE CHEMICAL CORPORATION, HYOGO PREFECTUREInventors: Katsuhiro Nagayama, Kunio Miyazawa, Shigeyuki Nakano
-
Patent number: 7858287Abstract: A photosensitive resin realizes formation of a pattern having a good shape, without introducing poor compatibility between an acid generator and a photoresist primary-component polymer having an acid-dissociable group, and a photosensitive composition containing the photosensitive resin. The photosensitive resin includes a repeating unit represented by formula (1): (wherein R1 represents a C2-C9 linear or branched divalent hydrocarbon group; each of R2 to R5 represents a hydrogen atom or a C1-C3 linear or branched hydrocarbon group; each of R6 and R7 represents an organic group, wherein R6 and R7 may together form a divalent organic group; and X?represents an anion); at least one of a repeating unit represented by formula (2): (wherein R8 represents a C2-C9 linear or branched hydrocarbon group) and a repeating unit represented by formula (3): a repeating unit represented by formula (4): optionally, a repeating unit represented by formula (5).Type: GrantFiled: November 30, 2007Date of Patent: December 28, 2010Assignees: Hyogo Prefecture, Toyo Gosei Co., LtdInventors: Takeo Watanabe, Hiroo Kinoshita, Shinichi Yusa, Tomotaka Yamanaka, Masamichi Hayakawa, Yosuke Osawa, Satoshi Ogi, Yoshitaka Komuro
-
Publication number: 20100320380Abstract: A charged particle separation apparatus that separates ionized gas clusters is disclosed. The charged particle separation apparatus includes an electric field applying part including two electrodes across which electric voltage is applied in order to generate electric field between the two electrodes thereby deflecting a trajectory of the ionized gas cluster, the electrodes including one of an opening and a void; and a plate opening that allows the ionized gas cluster whose trajectory is deflected by the electric field applying part to go therethrough.Type: ApplicationFiled: June 16, 2010Publication date: December 23, 2010Applicants: TOKYO ELECTRON LIMITED, HYOGO PREFECTUREInventors: Masaki Narushima, Koichi Mori, Isao Yamada, Noriaki Toyoda
-
Publication number: 20100319545Abstract: A charged particle separation apparatus that separates ionized gas clusters is disclosed. The charged particle separation apparatus includes three or more electric field applying parts arranged in an incident direction of an ionized gas cluster, wherein each of the electric field applying parts includes a pair of electrodes; an electric power source configured to supply alternating-current electric voltages to the three or more electric field applying parts in such a manner that an alternating-current electric voltage applied across one pair of the electrodes of one of the three or more electric field applying parts is different in phase from an alternating-current voltage applied across another pair of the electrodes of an adjacent one of the three or more electric field applying parts; and a plate including an opening in an extension of the incident direction.Type: ApplicationFiled: June 18, 2010Publication date: December 23, 2010Applicants: TOKYO ELECTRON LIMITED, HYOGO PREFECTUREInventors: MASAKI NARUSHIMA, Koichi Mori, Isao Yamada, Noriaki Toyoda
-
Publication number: 20080160449Abstract: The present invention provides a hyperbranched polymer that is capable of being used as a polymer material for nanofabrication including lithography, has enhanced dry etching resistance, sensitivity and surface smoothness, has a core shell structure and has an acid degradable repeating unit of tert-butyl vinylbenzoate ester in a shell portion, and a resist composition containing the hyperbranched polymer.Type: ApplicationFiled: February 12, 2008Publication date: July 3, 2008Applicants: Lion Corporation, Hyogo PrefectureInventors: Yoshiyasu Kubo, Yukihiro Kaneko, Kaoru Suzuki, Minoru Tamura, Mineko Horibe, Akinori Uno, Hiroo Kinoshita, Takeo Watanabe
-
Patent number: 7126194Abstract: On a silicon layer of an SOI wafer is defined a semiconductor device-forming region to form semiconductor devices thereon and an insulating region to electrically insulate the semiconductor device-forming region. Then, a mask layer is formed of nitride by means of photolithography so as to cover the semiconductor device-forming region. Then, an impurities-removing layer is formed by means of well known technique so as to cover the mask layer and embed the gaps between the adjacent masks of the mask layer. The impurities of the silicon layer of the SOI wafer are absorbed and removed by the distorted layer, the grain boundaries and the lattice defects of the impurities-removing layer.Type: GrantFiled: November 10, 2003Date of Patent: October 24, 2006Assignees: Hyogo Prefecture, Japan Society for the Promotion of ScienceInventors: Seigo Kishino, Hideki Tsuya
-
Publication number: 20040150087Abstract: On a silicon layer of an SOI wafer is defined a semiconductor device-forming region to form semiconductor devices thereon and an insulating region to electrically insulate the semiconductor device-forming region. Then, a mask layer is formed of nitride by means of photolithography so as to cover the semiconductor device-forming region. Then, an impurities-removing layer is formed by means of well known technique so as to cover the mask layer and embed the gaps between the adjacent masks of the mask layer. The impurities of the silicon layer of the SOI wafer are absorbed and removed by the distorted layer, the grain boundaries and the lattice defects of the impurities-removing layer.Type: ApplicationFiled: November 10, 2003Publication date: August 5, 2004Applicants: HYOGO PREFECTURE, JAPAN SOCIETY FOR THE PROMOTION OF SCIENCEInventors: Seigo Kishino, Hideki Tsuya