Patents Assigned to HYPERION SEMICONDUCTORS OY
  • Semiconductor logic element and a logic circuitry
    Patent number: 11283450
    Abstract: Disclosed is a semiconductor logic element including a field effect transistor of the first conductivity type and a field effect transistor of the second conductivity type. A gate of the first FET is an input of the semiconductor logic element, a drain of the second FET is referred to as the output of the semiconductor logic element and a source of the second FET is the source of the semiconductor logic element. By applying applicable potentials to the terminals of the field effect transistors it is possible to influence the state of the output of the logic element. Also disclosed are different kinds of logic circuitries including the described logic element.
    Type: Grant
    Filed: November 24, 2020
    Date of Patent: March 22, 2022
    Assignee: HYPERION SEMICONDUCTORS OY
    Inventor: Artto Aurola
  • Buried channel conductor insulator semiconductor field effect transistor
    Patent number: 10879900
    Abstract: Disclosed is a semiconductor logic element including a field effect transistor of the first conductivity type and a field effect transistor of the second conductivity type. A gate of the first FET is an input of the semiconductor logic element, a drain of the second FET is referred to as the output of the semiconductor logic element and a source of the second FET is the source of the semiconductor logic element. By applying applicable potentials to the terminals of the field effect transistors it is possible to influence the state of the output of the logic element. Also disclosed are different kinds of logic circuitries including the described logic element.
    Type: Grant
    Filed: June 20, 2019
    Date of Patent: December 29, 2020
    Assignee: HYPERION SEMICONDUCTORS OY
    Inventor: Artto Aurola
  • Semiconductor logic element and logic circuitries
    Patent number: 10833080
    Abstract: Disclosed is a semiconductor logic element having a field effect transistor of the first conductivity type and a field effect transistor of the second conductivity type. A gate of the first FET is an input of the semiconductor logic element, a drain of the second FET is referred to as the output of the semiconductor logic element and a source of the second FET is the source of the semiconductor logic element. By applying applicable potentials to the terminals of the field effect transistors it is possible to influence the state of the output of the logic element. Also disclosed are different kinds of logic circuitries with the described logic element.
    Type: Grant
    Filed: July 13, 2017
    Date of Patent: November 10, 2020
    Assignee: HYPERION SEMICONDUCTORS OY
    Inventor: Artto Aurola
  • Depletion mode buried channel conductor insulator semiconductor field effect transistor
    Patent number: 10389360
    Abstract: Disclosed is a semiconductor logic element including a field effect transistor of the first conductivity type and a field effect transistor of the second conductivity type. A gate of the first FET is an input of the semiconductor logic element, a drain of the second FET is referred to as the output of the semiconductor logic element and a source of the second FET is the source of the semiconductor logic element. By applying applicable potentials to the terminals of the field effect transistors it is possible to influence the state of the output of the logic element. Also disclosed are different kinds of logic circuitries including the described logic element.
    Type: Grant
    Filed: October 29, 2018
    Date of Patent: August 20, 2019
    Assignee: HYPERION SEMICONDUCTORS OY
    Inventor: Artto Aurola
  • Nonlinear resistor with two transistor chains
    Patent number: 10243565
    Abstract: Disclosed is a semiconductor logic element including a field effect transistor of the first conductivity type and a field effect transistor of the second conductivity type. A gate of the first FET is an input of the semiconductor logic element, a drain of the second FET is referred to as the output of the semiconductor logic element and a source of the second FET is the source of the semiconductor logic element. By applying applicable potentials to the terminals of the field effect transistors it is possible to influence the state of the output of the logic element. Also disclosed are different kinds of logic circuitries including the described logic element.
    Type: Grant
    Filed: April 16, 2018
    Date of Patent: March 26, 2019
    Assignee: HYPERION SEMICONDUCTORS OY
    Inventor: Artto Aurola
  • Semiconductor logic element and a logic circuitry
    Patent number: 9948304
    Abstract: Disclosed is a semiconductor logic element including a field effect transistor of the first conductivity type and a field effect transistor of the second conductivity type. A gate of the first FET is an input of the semiconductor logic element, a drain of the second FET is referred to as the output of the semiconductor logic element and a source of the second FET is the source of the semiconductor logic element. By applying applicable potentials to the terminals of the field effect transistors it is possible to influence the state of the output of the logic element. Also disclosed are different kinds of logic circuitries including the described logic element.
    Type: Grant
    Filed: January 13, 2016
    Date of Patent: April 17, 2018
    Assignee: HYPERION SEMICONDUCTORS OY
    Inventor: Artto Aurola