Abstract: An optical device including a waveguide and an electrode is described. The waveguide includes at least one optical material having an electro-optic effect. The electrode includes a channel region and extensions protruding from the channel region. The extensions are closer to a portion of the waveguide than the channel region is. Each extension includes a connecting portion coupled to the channel region and a retrograde portion. The connecting portion is between the retrograde portion and the channel region. The retrograde portion and/or the channel region has a width of not more than one micrometer.

Abstract: An optical device includes a substrate, an oxide layer on the substrate and an electro-optic device on the oxide layer. The oxide layer is at least one micrometer thick. The electro-optic device includes an electro-optic material having a thickness of not more than one micrometer. The silicon substrate, oxide layer, and the electro-optic material terminate at an edge. At least one of the silicon substrate has a thickness of at least five hundred micrometers or the edge includes a recessed region corresponding to a portion of the oxide layer.

Abstract: An optical device is described. The optical device includes a waveguide, a first engineered electrode, and a second engineered electrode. The waveguide includes at optical material(s) having an electro-optic effect. The optical material(s) include lithium. A portion of the waveguide has a waveguide width. The first engineered electrode includes a first channel region and first extensions protruding from the first channel region. The first extensions are closer to the portion of the waveguide than the first channel region is. The second engineered electrode includes a second channel region and second extensions protruding from the second channel region. The second extensions are closer to the portion of the waveguide than the second channel region is. A first extension of the first extensions is a distance from a second extension of the second \extensions. The distance is less than the waveguide width.

Abstract: An optical device is described. At least a portion of the optical device includes lithium niobate and is fabricated utilizing ultraviolet lithography. In some aspects the at least the portion of the optical device is fabricated using deep ultraviolet lithography. In some aspects, the short range root mean square surface roughness of a sidewall of the at least the portion of the optical device is less than ten nanometers. In some aspects, the at least the portion of the optical device has a loss of not more than 2 dB/cm.

Abstract: A substrate configured for an electro-optic device and an electro-optic device formed using the substrate are described. The substrate includes a semiconductor substrate, an insulating layer, and at least one thin film optical material. The semiconductor substrate includes a trap-rich layer and an underlying substrate layer. The insulating layer is on the semiconductor substrate, The trap-rich layer is between the underlying substrate layer and the insulating layer. The thin film optical material(s) have an electro-optic effect and are on the insulating layer.

Abstract: An optical device is described. The optical device includes a substrate, an optical channel, a photodiode and an optical path that couples the channel to the photo diode. The optical path has an optical path length that is at least one fourth of the optical channel length.

Abstract: A photonics device is described. The photonics devices include at least one electrode and a waveguide. The waveguide includes electro-optic material(s), a ridge, and a slab. A first portion of the waveguide is proximate to the electrode(s), while a second portion of the waveguide includes a bend. The ridge includes a first side and a second side opposite to the first side. Portions of the slab are proximate to the first side and the second side of the ridge in the first portion of the waveguide. A portion of the slab is omitted in the second portion of the waveguide.

Abstract: A singulated thin film lithium containing (TFLC) photonics device, as well as a method and system for singulating the device are described. The TFLC photonics device includes a device layer and a silicon substrate. The device layer includes a TFLC layer having a depth. The device layer also has a first sawn edge. The silicon substrate has a second sawn edge and includes an upper portion and a lower portion. The upper portion has the second sawn edge that is mutually aligned with the first sawn edge. The upper portion overhangs the lower portion.

Abstract: An optical modulator that uses adiabatic tapers to change the width of the waveguides between multimode waveguides and single mode waveguides on a low-loss, e.g. thin-film lithium niobate, electro-optic platform. The architecture enables the utilization of the fundamental mode of multimode wide optical waveguides that have lower optical propagation loss without sacrificing the benefit of the signal integrity and ease of control of single mode operation.

Abstract: An interface for an optical modulator and the optical modulator are described. The interface includes first and second differential line pairs. The first differential line pair has a first negative line and a first positive line arranged on opposing sides of a first waveguide. The first negative line is on a distal side of the first waveguide relative to a second waveguide. The first positive line is on a proximal side of the first waveguide relative to the second waveguide. The second differential line pair has a second negative line and a second positive line arranged on opposing sides of the second waveguide. The second negative line is on a distal side of the second waveguide relative to the first waveguide. The second positive line is on a proximal side of the second waveguide relative to the first waveguide. The first and second waveguides each include lithium niobate and/or lithium tantalate.

Abstract: An electro-optic device is described. The electro-optic device includes an electro-optic component implemented on an electro-optic material having a slab and a ridge portion. The electro-optic component includes a first portion of the slab and a portion of the ridge portion. The first portion of the slab has a first height. The ridge portion has a second height greater than the first height. A passive functionality component is implemented on a second portion of the slab and is optically coupled with the electro-optic component.

Abstract: An electro-optic device includes a substrate structure, a first layer, a second layer on the first layer, and a third layer on the second layer. The first layer includes a first thin film lithium-containing (TFLC) electro-optic material and having a first thickness. The second layer includes a second TFLC electro-optic material and has a second thickness. The third layer includes a third TFLC electro-optic material and having a third thickness. Electro-optic structure(s) of the electro-optic device includes the first layer, the second layer, and the third layer. In the electro-optic structure(s), the first layer has a first width, the second layer has a second width, and the third layer has a third width.

Abstract: An electro-optic device including a first waveguide, a second waveguide, and electrodes is described. The first waveguide includes a first thin film lithium-containing (TFLC) electro-optic material and carries a first optical signal. The second waveguide includes a second TFLC electro-optic material and carries a second optical signal. The electrodes include a differential electrode pair proximate to a portion of the first waveguide and to a portion of the second waveguide. The differential electrode pair is configured to provide a first modulation to the first optical signal and a second modulation to the second optical signal. A first magnitude of the first modulation is different from a second magnitude of the second modulation such that the electro-optic device has an engineered chirp.

Abstract: An electro-optic device is described. The electro-optic device includes a ridge waveguide and a channel waveguide. The ridge waveguide includes a first portion of at least one electro-optic material. The first portion of the electro-optic material(s) includes a slab and a ridge on the slab. The ridge has a ridge height. The slab has a slab height less than the ridge height. The channel waveguide is optically coupled with the ridge waveguide and includes a second portion of the electro-optic material(s). The channel waveguide has a channel height less than the slab height.

Abstract: An electro-optic device is described. The electro-optic device includes at least one optical material having an electro-optic effect. Further, the optical material(s) include lithium. The optical material(s) have a slab and a ridge waveguide. The slab has a top surface. The slab includes free surfaces. Each of the free surfaces is at a nonzero angle from the top surface of the slab and mitigates stress in the slab.

Abstract: An electro-optic device is described. The electro-optic device includes a substrate, an insulator on the substrate, an optical structure on the insulator and an electrode proximate to at least a portion of the optical structure. The substrate includes a trench region having a plurality of trenches therein. The trench region has an effective microwave index based on a substrate material and the plurality of trenches. The insulator is on the substrate. The optical structure is on the insulator. The optical structure has a thin film electro-optic layer including lithium. The electrode is proximate to a portion of the optical structure.

Abstract: An integrated electro-optic frequency comb generator based on ultralow loss integrated, e.g. thin-film lithium niobate, platform, which enables low power consumption comb generation spanning over a wider range of optical frequencies. The comb generator includes an intensity modulator, and at least one phase modulator, which provides a powerful technique to generate a broad high power comb, without using an optical resonator. A compact integrated electro-optic modulator based frequency comb generator, provides the benefits of integrated, e.g. lithium niobate, platform including low waveguide loss, high electro-optic modulation efficiency, small bending radius and flexible microwave design.

Abstract: An optical device including a waveguide, electrodes, and a connecting dielectric is described. The waveguide includes an electro-optic material having a waveguide optical refractive index and a waveguide microwave dielectric constant. The electrodes include a first electrode and a second electrode. The waveguide is between the first electrode and the second electrode. At least a portion of the connecting dielectric is between the waveguide and electrodes. The connecting dielectric has a microwave dielectric constant greater than the waveguide microwave dielectric constant.

Abstract: A hybrid photonics device package is described. The hybrid photonics device package includes an electro-optic integrated circuit and a photonics integrated circuit. The electro-optic integrated circuit includes an optical structure and an electrode on a first substrate. The optical structure has a thin film electro-optic layer including lithium. The photonics integrated circuit includes a second substrate and a photonics component on the second substrate. The photonics component and the optical structure are optically coupled. One of the electro-optic integrated circuit and the photonics integrated circuit is mounted on an other of the electro-optic integrated circuit and the photonics integrated circuit.

Abstract: An optical device configured to be coupled with an optical fiber is described. The optical device includes a waveguide, a low-confinement waveguide, and a low-confinement layer. The waveguide includes a high-confinement waveguide, which has a first index of refraction. The low-confinement waveguide is optically coupled with the high-confinement waveguide. At least a portion of the low-confinement waveguide has a second index of refraction less than the first index of refraction. The low-confinement waveguide has a thickness of at least a mode diameter in a portion of the optical fiber. The low-confinement layer is adjacent to a portion of the low-confinement waveguide. The low-confinement layer has a third index of refraction less than the second index of refraction.