Abstract: A method for forming a poly metal gate, comprising the steps of: providing a substrate where a gate oxide is formed; forming a polysilicon film, a barrier metal, a refractory metal film and a hard mask over the gate oxide; patterning the hard mask, the refractory metal film, the barrier metal and the polysilicon film to form a gate metal gate; forming a capping layer for oxidation prevention over the gate oxide to cover the poly metal gate; etching the capping layer for oxidation prevention to remain in sidewalls of the poly metal gate; carrying out a heat treatment using a H2 gas to cover a damage of the capping layer for oxidation prevention in the capping layer etching step; and carrying out a reoxidation process to recover a damage caused in the etching step for the formation of the poly metal gate and improve reliability of the gate oxide.
Abstract: An ink-jet print head comprises an ink drive unit formed on a first substrate and an ink reservoir unit formed on a second substrate. The ink drive unit includes a thin film piezoelectric transducer formed on one side of the substrate. The reservoir unit includes an etched cavity in the substrate for forming an ink reservoir, the cavity having an aperture in the base extending through the substrate to form an ink nozzle. The ink drive and ink reservoir units are bonded together with the piezoelectric transducer within the ink reservoir. Activating the transducer expels ink from the reservoir via the ink nozzle.
Type:
Grant
Filed:
June 2, 1995
Date of Patent:
December 10, 1996
Assignees:
AT&T Global Information Solutions Company, Hyundai Electronics, America & Symbios Logic Inc.