Abstract: A flash memory device includes a substrate having first and second wells. The first well is defined within the second well. A plurality of trenches defines the substrate into a plurality of sub-columnar active regions. The trenches is formed within the first well and extends into the second well. A plurality of flash memory cells are formed on each of the sub-columnar active regions.
Type:
Application
Filed:
February 6, 2003
Publication date:
March 4, 2004
Applicant:
Hyundai Electronics America, Inc., a California corporation