Abstract: The present invention discloses a method for forming a bit line of a semiconductor device which can easily perform a contact process of the semiconductor device, by forming parallel rows of I-shaped active regions, a plug poly and a ladder-type bit line. The spacing between adjacent active regions is maintained at the minimum line width. Two word lines of minimum line width and separated by the minimum line width are formed on the active region. The word lines are perpendicular to the active regions. A plug poly is formed on the active region between the word lines. A bit line contact plug is formed over the plug poly and a device isolation region. A bit line of minimum line width contacts the bit line contact plug and aligned generally parallel to the word lines is formed in a ladder-type configuration. That is, one side the lower portion of the contact plug contacts the plug poly, and the upper portion of the other side of the contact plug contacts the bit line.

Abstract: A method for forming a shallow junction of a semiconductor device using a zirconium film to cover a semiconductor substrate and implanting impurities into the zirconium film. A titanium film is then formed over the zirconium film and both the zirconium and the titanium films are subjected to a thermal treatment to form a zirconium silicide and a titanium silicide. Unreacted parts of the zirconium film and titanium film are removed and the zirconium and titanium silicides are then subject to a second thermal treatment.