Patents Assigned to Hyunix Semiconductor Inc.
  • SEMICONDUCTOR DEVICE WITH METAL GATE AND METHOD FOR FABRICATING THE SAME
    Publication number: 20090001582
    Abstract: A semiconductor device includes a substrate, a gate dielectric layer over the substrate, a silicon electrode over the gate dielectric layer, wherein the silicon electrode comprises a damascene pattern, a diffusion barrier layer on a bottom and a sidewall of the damascene pattern, and a metal electrode over the diffusion barrier layer, wherein the metal electrode fills the damascene pattern.
    Type: Application
    Filed: December 12, 2007
    Publication date: January 1, 2009
    Applicant: Hyunix Semiconductor Inc.
    Inventors: Ky-Hyun HAN, Ki-Won Nam