Patents Assigned to I
  • Magnetic memory device
    Patent number: 11127786
    Abstract: Disclosed is a magnetic memory device including a line pattern on a substrate, a magnetic tunnel junction pattern on the line pattern, and an upper conductive line that is spaced apart from the line pattern across the magnetic tunnel junction pattern and is connected to the magnetic tunnel junction pattern. The line pattern provides the magnetic tunnel junction pattern with spin-orbit torque. The line pattern includes a chalcogen-based topological insulator.
    Type: Grant
    Filed: August 30, 2019
    Date of Patent: September 21, 2021
    Assignees: SAMSUNG ELECTRONICS CO., LTD., I
    Inventors: Joonmyoung Lee, Whankyun Kim, Jeong-Heon Park, Woo Chang Lim, Junho Jeong