Abstract: The invention relates to a method and to a device for at least locally heating a plate including at least one layer (2) to be at least locally heated by at least one main, light flow pulse, and including at least one priming region (4) located deeply relative to the front surface of said layer to be heated, wherein the main flow (7) is capable of heating said layer to be heated (2) while the temperature of the latter is within a high temperature range (PHT), and a priming a secondary heating means (9) capable of heating said priming region from a temperature within a low temperature range (PBT) up to a temperature within said high temperature range (PHT).

Abstract: A stem 8 has the following elements made from FRP: an upper outer shell 4U, a main structure upper half 3U, a main structure lower half 3L, and a lower outer shell 4L when the stem is placed in a flat state. The elements are integrated into one piece by stacking the elements and applying heat and pressure to melt resins impregnated in the FRP structural elements. Each outer shell is a curved prepreg sheet formed by impregnating carbon fibers arranged at angle of ±45 degrees with a thermoplastic resin, and each upper and lower halve is an evenly stacked part in which prepreg sheets are stacked. Overlapping section 5 of the upper and lower outer shells are formed such that the left and right portions of a main structure 3 formed by integrating the upper and lower halves 3U, 3L does not have a stepped outer surface.

Abstract: A valve system for providing fluid flow through radial openings disposed along an axial length of a tubular. The tubular comprises at least one valve group containing at least two valves operable by one drop ball. An inset 302 e.g. of standard grade steel provided in a harder liner 301 in the opening provides an intermediate small opening for at least the time required to open all the remaining valves in the group. The small opening limits the pressure drop over the valve. When all valves are open, the insets 302 are eroded away by an abrasive material, e.g. a slurry used for hydraulic fracturing, and permanent full openings are created.

Abstract: A packer for sealing against an inner cylindrical mandrel and a wellbore wall.

Abstract: Two well tools (100, 200) having centrally mounted drive shafts (160, 260) are provided with a mechanism to remove debris from a coupling between them. Thereafter, the tools can be coupled by inserting a first outer sleeve (110) on the first tool into and rotationally lock it to a second outer sleeve (210) on the second tool. The drive shafts (160, 260) are coupled in a similar manner. The mechanism for removing debris can displace the debris and/or a flushing device (170) using well fluid to stir up debris. The coupling has space for debris that is not removed, e.g. in the form of a chamber 264. The female part of the coupling may comprise a spring loaded lid (271) to reduce pollution by debris when the coupling is not in use.

Abstract: A trigger mechanism for a ball activated device comprises a seat sleeve with seat defining members forming a fluid seal between the ball and the seat in an initial state and allowing the ball to pass through the seat in a final state. An alternating member can move radially in an aperture through an inner sleeve and abuts an outer surface on the seat sleeve in the initial state, is received in a recess on the seat sleeve in an intermediate state, and is received in a groove in the outer sleeve in the final state. A protective sleeve may extend axially from the seat sleeve over a seat receiving area. The mechanism is suitable for cementing and fracturing as particles cannot penetrate to its moving parts.

Abstract: A method for producing a hybrid substrate, including a support substrate, a continuous buried insulator layer and, on this continuous layer, a hybrid layer including alternating zones of a first material and at least one second material, wherein these two materials are different by their nature and/or their crystallographic characteristics. The method forms a hybrid layer, including alternating zones of first and second materials, on a homogeneous substrate, assembles this hybrid layer, the continuous insulator layer and the support substrate, and eliminates a part at least of the homogeneous substrate, before or after the assembling.

Abstract: The present invention provides a robust, durable and reliable cylindrical valve having closable, radially extending openings for use in cementing, injection, including hydraulic fracturing, and production in wells having high pressures and large pressure differences. The valve may comprise scraping rings in order to remove deposits and the like when it is to be closed after use. Magnets or other suitable means indicates whether the valve is in an open or closed position.

Abstract: The present disclosure provides a chemical etchant which is capable of removing Ge and Ge-rich SiGe alloys in a controlled manner. The chemical etchant of the present disclosure includes a mixture of a halogen-containing acid, hydrogen peroxide, and water. Water is present in the mixture in an amount of greater than 90% by volume of the entire mixture. The present disclosure also provides a method of making such a chemical etchant. The method includes mixing, in any order, a halogen-containing acid and hydrogen peroxide to provide a halogen-containing acid/hydrogen peroxide mixture, and adding water to the halogen-containing acid/hydrogen peroxide mixture. Also disclosed is a method of etching a Ge or Ge-rich SiGe alloy utilizing the chemical etchant of the present application.

Abstract: A method for transferring a thin layer from a lithium-based first substrate includes proton exchange between the first substrate and a first electrolyte, which is an acid, through a free face of the first substrate so as to replace lithium ions of the first substrate by protons, in a proportion between 10% and 80%, over a first depth e1. A reverse proton exchange between the first substrate and a second electrolyte, through the free face is carried out so as to replace substantially all the protons with lithium ions over a second depth e2 smaller than the first depth e1, and so as to leave an intermediate layer between the depths e1 and e2, in which intermediate layer protons incorporated during the proton exchange step remain. The depth e2 defines a thin layer between the free face and the intermediate layer. A heat treatment is carried out under conditions suitable for embrittling the intermediate layer and the thin film is separated from the first substrate at the intermediate layer.

Abstract: A custom-made stem has a shape displaying good fit and fill, reflecting personal characteristics of a femur obtained by computer calculation. A model is made from the femur which does not need much time to calculate in spite of the fact that it complies with the characteristic of shape of the femur, particularly with the personal difference in the curvature thereof, which usually complicates the calculation. Several models are made which can be implanted in a deep hollow by calculating in a reverse course how the stem is pulled out of the deep hollow, to display reliable models to a surgeon. By determining the movement peculiar to the stem of a particular patient, an improved stem is made in a short time which meets the needs of the surgeon. The stem, which is custom-made, can be confirmed beforehand that it agrees with the femur of the patient.

Abstract: A process of making semiconductor-on-glass substrates having a relatively stiff (e.g. relatively high Young's modulus of 125 or higher) stiffening layer between the silicon film and the glass in an ion implantation thin film transfer process by depositing a stiffening layer or layers on one of the donor wafer or the glass substrate in order to eliminate the canyons and pin holes that otherwise form in the surface of the transferred silicon film during the thin film transfer process. The new stiffening layer may be formed of a material, such as silicon nitride, that also serves as an efficient barrier against penetration of sodium and other harmful impurities from the glass substrate into the silicon film.

Abstract: The invention concerns a heterojunction bipolar transistor comprising a support, and epitaxially grown from said support, at least: one collecting, respectively emitting, layer; at least one base layer; and at least one emitting, respectively collecting, layer. The collecting, respectively emitting, layer comprises: at least one first undercoat contacted with said base layer, substantially of similar composition as said emitting, respectively collecting, layer; and at least one second undercoat on the side opposite said base layer relative to said first undercoat.

Abstract: The present disclosure provides a chemical etchant which is capable of removing Ge and Ge-rich SiGe alloys in a controlled manner. The chemical etchant of the present disclosure includes a mixture of a halogen-containing acid, hydrogen peroxide, and water. Water is present in the mixture in an amount of greater than 90% by volume of the entire mixture. The present disclosure also provides a method of making such a chemical etchant. The method includes mixing, in any order, a halogen-containing acid and hydrogen peroxide to provide a halogen-containing acid/hydrogen peroxide mixture, and adding water to the halogen-containing acid/hydrogen peroxide mixture. Also disclosed is a method of etching a Ge or Ge-rich SiGe alloy utilizing the chemical etchant of the present application.

Abstract: A method and/or system are provided for producing a structure comprising a thin layer of semiconductor material on a substrate. The method includes creating an area of embrittlement in the thickness of a donor substrate, bonding the donor substrate with a support substrate and detaching the donor substrate at the level of the area of embrittlement to transfer a thin layer of the donor substrate onto the support substrate. The method also includes thermal treatment of this resulting structure to stabilize the bonding interface between the thin layer and the substrate support. The invention also relates to the structures obtained by such a process.

Abstract: A data storage medium includes a carrier substrate having an electrode layer on the surface thereof and a sensitive material layer extending along the electrode layeradapted to be locally modified between two electrical states by the action of a localized electric field. A reference plane extends globally parallel to the sensitive material layer and is configured to accommodate at least one element for application of an electrostatic field in combination with the electrode layer the electrode layer including a plurality of conductive portions having a dimension at most equal to 100 nm in at least one direction parallel to the reference plane and separated by at least one electrically insulative zone, where at least some of the conductive portions are electrically interconnected, the conductive portions defining data write/read locations within the sensitive material layer.

Abstract: A method for reclaiming a surface of a substrate, wherein the surface, in particular a silicon surface, comprises a protruding residual topography, comprising at least the layer of a first material. By providing a filling material in the non-protruding areas of the surface of the substrate and the subsequent polishing, the reclaiming can be carried out such that the material consuming double-sided polishing step used in the prior art is no longer necessary.

Abstract: The disclosure relates to electronic devices and associated methods of manufacture including materials of the Group III/N. An exemplary device successively includes, from its base towards its surface: (i) a support substrate, (ii) a layer adapted to contain an electron gas, (iii) a barrier layer, and (iv) a superficial layer extending on at least one part of the surface of the barrier layer, wherein the superficial layer has an electrical field of which the current is controlled so that, in at least one first region of the superficial layer, the electrical field is weaker than in a second region of the superficial layer.

Abstract: The invention relates to a method of initiating molecular bonding, comprising bringing one face (31) of a first wafer (30) to face one face (21) of a second wafer (20) and initiating a point of contact between the two facing faces. The point of contact is initiated by application to one of the two wafers, for example using a bearing element (51) of a tool (50), of a mechanical pressure in the range 0.1 MPa to 33.3 MPa.

Abstract: A well plug having a flexible expandable sealing (330) and a metallic anchor (350) which can be moved radially out or in by rotating a leadscrew (170) in opposite directions. The well plug has a ball valve in a central longitudinal passage, which is kept open whenever the leadscrew (160) rotates. This increases the accuracy when setting the plug, and reduces the risk for the plug moving uncontrolled in the well bore during setting or retrieval. The ball valve can be opened or closed by rotating a transmitting shaft (120, 140) within an angle of free motion, before the leadscrew is pulled along in the rotation. A ball valve for high pressure applications is also shown.