Abstract: The present disclosure relates to an integrated wafer processing apparatus for fabricating semiconductor chips. This integrated wafer processing system combines the lithography patterning steps and irradiation curing steps of the patternable dielectric into one system. The patternable low-k material of the present disclosure also functions as a photoresist, i.e. is a photo-patternable low-k dielectric material.

Abstract: A method of making phase change materials on a substrate by electrochemical atomic layer deposition, which includes sequentially electrodepositing at least one atomic layer of a first element of a first solution and at least one atomic layer of a second element of a second solution on a substrate; and repeating the sequential electrodepositing until at least one film of a phase change material is formed on the substrate.

Abstract: A method of manufacturing a thermal paste, in which the method includes feeding the thermal paste into a chamber of an extruder; mixing the thermal paste at elevated temperatures; de-airing the thermal paste; and extruding the thermal paste out of the chamber through a die as a pre-form or into a cartridge, such that air channels and pseudo-grain boundaries are prevented from forming in the thermal paste.

Abstract: An etching composition, particularly for kinetically controlled etching of copper and copper alloy surfaces; a process for etching copper and copper alloys, particularly for etching at high rates to provide uniform and smooth, isotropic surfaces; an etched copper or copper alloy surface obtained by the process; and a process for generating copper or copper alloy electrical interconnects or contact pads. The etching composition and etching processes provide a smooth, isotropic fast etch of copper and copper alloys for semiconductor fabrication and packaging.

Abstract: A contact rhodium structure is fabricated by a process that comprises obtaining a substrate having a dielectric layer thereon, wherein the dielectric layer has cavities therein into which the contact rhodium is to be deposited; depositing a seed layer in the cavities and on the dielectric layer; and depositing the rhodium by electroplating from a bath comprising a rhodium salt; an acid and a stress reducer; and then optionally annealing the structure.

Abstract: A reversible thermal thickening grease for microelectronic packages, in which the grease contains filler particles; at least one polymer; and a binder; in which the filler particles are dispersed within the binder, in which one or more segments of the at least one polymer may be attached to the filler particles prior to dispersion in the binder, and in which the polymer collapses at temperatures below a Theta temperature and swells at temperatures above a Theta temperature. During the operation of a microelectronic package, grease pump-out and air proliferation are minimized with use of the reversible thermal thickening grease, while grease fluidity is retained under repetitive thermal stresses.