Abstract: The present disclosure relates to a piezoelectric single-crystal element, a MEMS device using same, and a method for manufacturing same, wherein the piezoelectric single-crystal element includes a wafer, a lower electrode stacked on the wafer, a piezoelectric single-crystal thin film stacked on the lower electrode, and an upper electrode stacked on the piezoelectric single-crystal thin film, wherein the piezoelectric single-crystal thin film is composed of PMN-PT, PIN-PMN-PT or Mn:PIN-PMN-PT, and the piezoelectric single-crystal thin film has a polarization direction set to a <001> axis, a <011> axis or a <111> axis, and a MEMS device using same.

Abstract: A film structure of a ferroelectric single crystal which can be beneficially used in the fabrication of high-performance electric or electronic parts or devices is prepared by adhering a ferroelectric single crystal plate to a substrate by a conductive adhesive or metal layer, the ferroelectric single crystal plate being polished before or after the adhesion with the substrate.

Abstract: The present invention relates to a ferroelectric ceramic compound having the composition of the following formula: s[L]?x[P]y[M]z[N]p[T], a ferroelectric ceramic single crystal, and preparation processes thereof. The ferroelectric ceramic compound and the single crystal according to the present invention are relaxor ferroelectrics having high piezoelectricity, a high electromechanical coefficient and a high electrooptical coefficient, and are useful for manufacturing tunable filters for radio communication, optical communication devices, surface acoustic wave devices, and the like. Particularly, the process of preparing the single crystal according to the present invention enables preparation of a single crystal having a diameter of 5 cm or greater and a single crystal wafer with uniform composition.

Abstract: A film structure of a ferroelectric single crystal which can be beneficially used in the fabrication of high-performance electric and electronic parts and devices is prepared by forming an electrode layer having a perovskite crystal structure on a substrate made of a silicon or ferroelectric single crystal optionally polished to have a off-axis crystal structure, and epitaxially growing a layer of a ferroelectric single crystal thereon by pulsed laser deposition (PLD) or metallorganic chemical vapor deposition (MOCVD).

Abstract: An ultrasonic probe comprising a piezoelectric element, a first electrode formed on a substantial portion of a first main face, a first side face and a part of a second main face of the piezoelectric element, and a second electrode formed on a substantial portion of a second main face, a second side face and a part of a first main face of the piezoelectric element, the two electrodes being isolated from each other by two grooves formed on the first and second main faces of the piezoelectric element, in a manner parallel to the side edges of the piezoelectric element, respectively, has good vibration and probing properties.

Abstract: A surface acoustic wave (SAW) filter comprising as a substrate a piezoelectric single crystal having the composition of formula (I) with high dielectric and piezoelectric constants, low temperature coefficient and good electromechanical properties has a high piezoelectric constant, a low insertion loss, and a broad bandwidth in a high frequency region, and therefore can be useful for preparing a SAW filter for high frequency telecommunication systems: x(A)y(B)z(C)—p(P)n(N)  (I) wherein, (A) is Pb(Mg1/3Nb2/3)O3 or Pb(Zn1/3Nb2/3)O3, (B) is PbTiO3, (C) is LiTaO3, (P) is a metal selected from Pt, Au, Ag, Pd and Rh, (N) is an oxide of a metal selected from Ni, Co, Fe, Sr, Sc, Ru, Cu and Cd, x is a number of 0.65 to 0.98, y is a number of 0.01 to 0.34, z is a number of 0.01 to 0.1, and p and n are each independently a number of 0.01 to 5.

Abstract: A ferroelectric single crystal having the composition of formula (I) has a high Piezoelectric constant together with good electromechanical and electrooptical properties and it can be prepared in a size of 5 cm in diameter or greater, useful for preparing various devices: x(A)y(B)z(C)-p(P)n(N); (I) wherein, (A) is Pb(Mg⅓ Nb⅔)O3 or Pb(Zn⅓Nb⅔)O3, (B) is PbTiO3, (C) is LiTaO3, (P) is a metal selected from the group consisting of Pt, Au, Ag, Pd and Rh, (N) is an oxide of a metal selected from the group consisting of Ni, Co, Fe, Sr, Sc, Ru, Cu and Cd, x is a number in the range of 0.65 to 0.98, y is a number in the range fo 0.01 to 0.34, z is a number in the range of 0.01 to 0.1, and p and n are each independently a number in the range of 0.01 to 5.