Abstract: A film structure of a ferroelectric single crystal which can be beneficially used in the fabrication of high-performance electric or electronic parts or devices is prepared by adhering a ferroelectric single crystal plate to a substrate by a conductive adhesive or metal layer, the ferroelectric single crystal plate being polished before or after the adhesion with the substrate.
Abstract: A film structure of a ferroelectric single crystal which can be beneficially used in the fabrication of high-performance electric and electronic parts and devices is prepared by forming an electrode layer having a perovskite crystal structure on a substrate made of a silicon or ferroelectric single crystal optionally polished to have a off-axis crystal structure, and epitaxially growing a layer of a ferroelectric single crystal thereon by pulsed laser deposition (PLD) or metallorganic chemical vapor deposition (MOCVD).
Type:
Grant
Filed:
July 14, 2003
Date of Patent:
July 15, 2008
Assignee:
Ibule Photonics, Inc.
Inventors:
Jaehwan Eun, Sang-Goo Lee, Hyeongjoon Kim, Minchan Kim
Abstract: An ultrasonic probe comprising a piezoelectric element, a first electrode formed on a substantial portion of a first main face, a first side face and a part of a second main face of the piezoelectric element, and a second electrode formed on a substantial portion of a second main face, a second side face and a part of a first main face of the piezoelectric element, the two electrodes being isolated from each other by two grooves formed on the first and second main faces of the piezoelectric element, in a manner parallel to the side edges of the piezoelectric element, respectively, has good vibration and probing properties.