Abstract: A method of manufacturing a semiconductor device includes providing a first semiconductor substrate having a first main surface and an opposing second main surface, and forming a pattern into the first semiconductor substrate. The pattern includes a plurality of trenches defining a plurality of mesas. Each of the plurality of mesas has sidewalls and a free surface formed by material of the first semiconductor substrate. The method further includes forming a cavity in the first semiconductor substrate such that the pattern is recessed in the cavity, forming an oxide layer in the cavity and on the sidewalls and free surfaces of the plurality of mesas, and etching the oxide layer to remove the oxide layer from the free surfaces of the plurality of mesas and at least a portion of the sidewalls of the plurality of mesas.

Abstract: A method of forming a superjunction device includes providing a semiconductor layer having first and second opposing main surfaces and a first doping concentration of a dopant of a first conductivity type, forming at least one device proximate the first main surface, forming at least one trench adjacent to the device and extending into the semiconductor layer from the first main surface, doping at least a portion of a sidewall of the trench with a dopant of a second, different conductivity type to form a first region in the semiconductor layer adjacent to the sidewall and extending at least partially between the first and second main surfaces, providing a substrate with a first dielectric layer arranged thereon, bonding the first dielectric layer to the first main surface to cover the trench and at least a portion of the device, and removing the substrate.

Abstract: A superjunction device includes a substrate having first and second main surfaces and a first doping concentration of a first dopant. A first semiconductor layer having a second doping concentration of the first dopant is formed on the substrate. A second semiconductor layer is formed on the first layer and has a main surface. At least one trench extends from the main surface at least partially into the first semiconductor layer. A first region having a third doping concentration of the first dopant extends at least partially between the main surface and the first layer. A second region having a fourth doping concentration of a second dopant is disposed between the first region and a trench sidewall and extends at least partially between the main surface and the first layer. A third region having a fifth doping concentration of the first dopant is disposed proximate the main surface.

Abstract: A photodiode includes a semiconductor having front and backside surfaces and first and second active layers of opposite conductivity, separated by an intrinsic layer. A plurality of isolation trenches filled with conductive material extend into the first active layer, dividing the photodiode into a plurality of cells and forming a central trench region in electrical communication with the first active layer beneath each of the cells. Sidewall active diffusion regions extend the trench depth along each sidewall and are formed by doping at least a portion of the sidewalls with a dopant of first conductivity. A first contact electrically communicates with the first active layer beneath each of the cells via the central trench region. A plurality of second contacts each electrically communicate with the second active layer of one of the plurality of cells. The first and second contacts are formed on the front surface of the photodiode.