Abstract: A charged particle beam device (100) is described. The charged particle beam device includes a beam source (150) for generating a charged particle beam (101); a lens device (160); and a beam deflector device (110) for deflecting the charged particle beam with respect to a direction of incidence (A).

Abstract: According to an embodiment, a method of operating a charged particle beam device is provided. The charged particle beam device includes a beam separation unit, a first optical component distanced from the beam separation unit and a second optical component distanced from the beam separation unit and distanced from the first optical component. The method includes generating a primary charged particle beam. The method further includes generating a first electric field and a first magnetic field in the beam separation unit. The method further includes guiding the primary charged particle beam through the beam separation unit in which the first electric field and the first magnetic field are generated, wherein a travel direction of the primary charged particle beam leaving the beam separation unit is aligned with a first target axis under the influence of the first electric field and the first magnetic field.

Abstract: A charged particle beam device is described. In one aspect, the charged particle beam device includes a charged particle beam source, and a switchable multi-aperture for generating two or more beam bundles from a charged particle beam which includes: two or more aperture openings, wherein each of the two or more aperture openings is provided for generating a corresponding beam bundle of the two or more beam bundles; a beam blanker arrangement configured for individually blanking the two or more beam bundles; and a stopping aperture for blocking beam bundles. The device further includes a control unit configured to control the individual blanking of the two or more beam bundles for switching of the switchable multi-aperture and an objective lens configured for focusing the two or more beam bundles on a specimen or wafer.

Abstract: A charged particle beam specimen inspection system is described. The system includes an emitter for emitting at least one charged particle beam, a specimen support table configured for supporting the specimen, an objective lens for focusing the at least one charged particle beam, a charge control electrode provided between the objective lens and the specimen support table, wherein the charge control electrode has at least one aperture opening for the at least one charged particle beam, and a flood gun configured to emit further charged particles for charging of the specimen, wherein the charge control electrode has a flood gun aperture opening at which a conductive membrane is provided which is positioned between the flood gun and the specimen support table.

Abstract: A method of operating a charged particle beam device is provided. The charged particle beam device includes a beam separator that defines an optical axis, and includes a magnetic beam separation portion and an electrostatic beam separation portion. The method includes generating a primary charged particle beam, and applying a voltage to a sample, the voltage being set to a first value to determine a first landing energy of the primary charged particle beam. The method further includes creating an electric current in the magnetic beam separation portion, the current being set to a first value to generate a first magnetic field, and applying a voltage to the electrostatic beam separation portion, the voltage being set to a first value to generate a first electric field.

Abstract: A scanning charged particle beam device configured to image a specimen is described. The scanning charged particle beam device includes a source of charged particles, a condenser lens for influencing the charged particles, an aperture plate having at least two aperture openings to generate at least two primary beamlets of charged particles, at least two deflectors, wherein the at least two deflectors are multi-pole deflectors, a multi-pole deflector with an order of poles of 8 or higher, an objective lens, wherein the objective lens is a retarding field compound lens, a beam separator configured to separate the at least two primary beamlets from at least two signal beamlets, a beam bender, or a deflector or a mirror configured to deflect the at least two signal beamlets, wherein the beam bender is a hemispherical beam bender or beam bender having at least two curved electrodes, and at least two detector elements.

Abstract: A charged particle beam source device adapted for generating a charged particle beam is provided. The charged particle beam source device includes an emitter tip adapted for providing charged particles. Furthermore, an extractor electrode having an aperture opening is provided for extracting the charged particles from the emitter tip. An aperture angle of the charged particle beam is 2 degrees or below the aperture angle being defined by a width of the aperture opening and a distance between the emitter tip and the extractor electrode, wherein the distance between the emitter tip and the extractor electrode is a range from 0.1 mm to 2 mm.

Abstract: A gun arrangement configured for generating a primary electron beam for a wafer imaging system is described. The arrangement includes a controller configured for switching between a normal operation and a cleaning operation, a field emitter having an emitter tip adapted for providing electrons and emitting an electron beam along an optical axis, an extractor electrode adapted for extracting the electron beam from the emitter tip electrode, a suppressor electrode, and at least one auxiliary emitter electrode arranged radially outside the suppressor electrode, and provided as a thermal electron emitter for thermally emitting electrons towards the optical axis.

Abstract: A charged particle beam device is described. In one aspect, the charged particle beam device includes a charged particle beam source, and a switchable multi-aperture for generating two or more beam bundles from a charged particle beam which includes: two or more aperture openings, wherein each of the two or more aperture openings is provided for generating a corresponding beam bundle of the two or more beam bundles; a beam blanker arrangement configured for individually blanking the two or more beam bundles; and a stopping aperture for blocking beam bundles. The device further includes a control unit configured to control the individual blanking of the two or more beam bundles for switching of the switchable multi-aperture and an objective lens configured for focusing the two or more beam bundles on a specimen or wafer.

Abstract: An electron beam device 100 includes: a beam emitter 102 for emitting a primary electron beam 101; an objective electron lens 127 for focusing the primary electron beam 101 onto a specimen 130, the objective lens defining an optical axis 126; a beam tilting arrangement 103 configured to direct the primary electron beam 101 to the electron lens 127 at an adjustable offset from the optical axis 126 such that the objective electron lens 127 directs the electron beam 101 to strike the specimen 130 at an adjustable oblique beam landing angle, whereby a chromatic aberration is caused; a beam separator 115 having a first dispersion for separating a signal electron beam 135 from the primary electron beam 101; and a dispersion compensation element 104 adapted to adjust a compensation dispersion of the primary electron beam 101 so as to compensate for a beam aberration resulting from the first dispersion and from the chromatic aberration.

Abstract: A method of compensating mechanical, magnetic and/or electrostatic inaccuracies in a scanning charged particle beam device is described. The method includes an alignment procedure, wherein the following steps are conducted: compensating 4-fold astigmatism with an element having at least 8-pole compensation capability, wherein the aligning and compensating steps of the alignment procedure act on a charged particle beam with beam dimensions in two orthogonal directions each of at least 50 ?m and coaxially aligned with at least the element having at least the 8-pole compensation capability.

Abstract: An electron beam wafer imaging system is described. The system includes an emitter for emitting an electron beam; a power supply for applying a voltage between the emitter and the column housing of at least 20 kV; an objective lens for focusing the electron beam on a wafer, wherein the magnetic lens component and the electrostatic lens component substantially overlap each other, wherein the electrostatic lens component has a first electrode, a second electrode and a third electrode; and a control electrode positioned along an optical axis from the position of the third electrode to the position of a specimen stage, wherein the control electrode is configured for control of signal electrons; a controller to switch between a first operational mode and a second operational mode, wherein the controller is connected to a further power supply for switching between the first operational mode and the second operational mode.

Abstract: A method of operating a focused ion beam device having a gas field ion source is described. According to some embodiments, the method includes emitting an ion beam from a gas field ion source, providing an ion beam column ion beam energy in the ion beam column which is higher than the final beam energy, decelerating the ion beam for providing a final beam energy on impingement of the ion beam on the specimen of 1 keV to 4 keV, and imaging the specimen.

Abstract: A secondary charged particle detection device for detection of a signal beam is described. The device includes a detector arrangement having at least two detection elements with active detection areas, wherein the active detection areas are separated by a gap (G), a particle optics configured for separating the signal beam into a first portion of the signal beam and into at least one second portion of the signal beam, and configured for focusing the first portion of the signal beam and the at least one second portion of the signal beam. The particle optics includes an aperture plate and at least a first inner aperture openings in the aperture plate, and at least one second radially outer aperture opening in the aperture plate, wherein the aperture plate is configured to be biased to one potential surrounding the first inner aperture opening and the at least one outer aperture opening.

Abstract: A correction device for a charged particle beam device for decreasing, correcting or inverting (that is adjusting) the spherical aberration of a charged particle beam is described. The correction principle is similar to that of common multipole-Correctors. But unlike common devices of that kind this new correction device gets along entirely with plane apertures having specially shaped holes in order to supply the multipoles required for correction and is therefore predestined for miniaturization and the use in multi column devices.

Abstract: A valve unit configured for a charged particle beam device having a beam path 2 is described. The valve unit includes a vacuum sealed valve housing 102 configured for a pressure difference between the inside of the valve housing and the outside of the valve housing, wherein the housing provides a beam path portion 103 for having a charged particle beam pass therethrough along the beam path, a valve positioning unit adapted for selectively providing a first movement of the valve housing such that the beam path portion is selectively moved into and out of the beam path, and at least one sealing element 122 configured for a second movement, wherein the second movement is different from the first movement.

Abstract: A charged particle beam device is provided, including: a charged particle beam source adapted to generate a charged particle beam on an axis; an optical aberration correction device and an objective lens device, which define a corrected beam aperture angle adjusted to reduce diffraction; and a charged particle beam tilting device; wherein the optical aberration correction device and the objective lens device are adapted to provide the charged particle beam with a beam aperture angle smaller than the corrected beam aperture angle; and wherein the charged particle beam tilting device is adapted to provide a beam tilt angle which is equal or less than the corrected beam aperture angle. Further, a method of operating a charged particle beam device is provided.

Abstract: A charged particle beam device for inspecting a specimen includes a charged particle beam source adapted to generate a primary charged particle beam; an objective lens device adapted to direct the primary charged particle beam onto the specimen; a retarding field device adapted to accelerate secondary charged particles starting from the specimen, a first detector device having a central opening, includes at least two azimuthal detector segments for detecting secondary particles, wherein the objective lens device is adapted such that particles with different starting angles from the specimen exhibit crossovers at substantially the same distance from the specimen between the objective lens and the detector device, and an aperture located between the objective lens and the crossovers, having an opening which is equal to or smaller than the central opening in the detector device.

Abstract: It is provided a charged particle beam device for inspecting a specimen, comprising a charged particle beam source adapted to generate a primary charged particle beam; an objective lens device adapted to direct the primary charged particle beam onto the specimen; and a detector device comprising one or more charged particle detectors adapted to detect a secondary charged particle beam generated by the primary charged particle beam at the specimen and passing through the objective lens device, the secondary charged particle beam comprising a first group of secondary charged particles starting from the specimen with high starting angles and a second group of secondary charged particles starting from the specimen with low starting angles; wherein at least one of the charged particle detectors is adapted to detect depending on the starting angles one group of the first and the second groups of secondary charged particles.

Abstract: An emitter assembly for emitting a charged particle beam along an optical axis is described. The emitter assembly being housed in a gun chamber and includes an emitter having an emitter tip, wherein the emitter tip is positioned at a first plane perpendicular to the optical axis and wherein the emitter is configured to be biased to a first potential, an extractor having an opening, wherein the opening is positioned at a second plane perpendicular to the optical axis and wherein the extractor is configured to be biased to a second potential, wherein the second plane has a first distance from the first plane of 2.25 mm and above.