Abstract: A proximity-electrode for a charged particle beam device is provided, the proximity-electrode including a body having an aperture within the body, and the body having a plurality of protrusions cantilevering radially into the aperture, and the aperture and the protrusions having an n-fold rotational symmetry, where n is an integer.

Abstract: An electron beam apparatus (100) is described, including an electron source (105) configured to generate a primary electron beam propagating along an optical axis (A), a sample stage (108) configured to support a sample, an objective lens (120) configured to focus the primary electron beam on the sample for causing an emission of a signal electron beam and a foil or grid lens (300, 400) for influencing the signal electron beam. The foil or grid lens includes an electrode (340) that surrounds the optical axis; and a first foil or grid (320) adjacent to the electrode and perpendicular to the optical axis, the first foil or grid being substantially transparent to electrons, wherein a central opening (325) configured to allow the primary electron beam to pass through the central opening is provided in the first foil or grid.

Abstract: A method of determining a beam convergence of a charged particle beam (11) focused by a focusing lens (120) toward a sample (10) in a charged particle beam system (100), comprising: (a) taking one or more images (h1 . . . N) of the sample when the sample is arranged at one or more defocus distances (z1 . . . N) from a respective beam focus of the charged particle beam, and retrieving one or more retrieved beam profiles (g1 . . . N) from the one or more images (h1 . . . N); (b) simulating one or more beam profiles at the one or more defocus distances (z1 . . . N) based at least on an estimated beam convergence value (initialC) of the charged particle beam to provide one or more simulated beam profiles (g?1 . . . N); (c) determining a magnitude (R) of a difference between the one or more simulated beam profiles (g?1 . . . N) and the one or more retrieved beam profiles (g1 . . .

Abstract: An aberration corrector. The aberration corrector including a first plurality of magnetic elements, each magnetic element comprising a magnetic pole and a corresponding magnetic rod for providing a magnetic field to the magnetic pole. The first plurality of magnetic elements including at least a first magnetic element, the first magnetic element including a first magnetic pole; a first magnetic rod having a proximal end adjacent to the first magnetic pole and a distal end opposite the proximal end; the proximal end having a tip with a tip surface in a shape of a semi-spheroid; and a contact point of the tip surface contacts the first magnetic pole.

Abstract: A charged particle optics for a charged particle beam apparatus having a charged particle beam and a beam propagation direction of the charged particle beam apparatus is described. The charged particle optics includes a focusing lens. The focusing lens includes a first electrode with a first aperture; a second electrode with a second aperture, the second electrode being mechanically movable at least in a first direction perpendicular to the beam propagation direction; and an actuator coupled to the second electrode to move the second electrode in at least the first direction for displacement of the second aperture with respect to the first aperture. The charged particle optics further includes a deflection system positioned upstream of the second electrode to deflect the charged particle beam, based on the displacement, to guide the charged particle beam through the second aperture.

Abstract: A method of forming a multipole device (100) for influencing an electron beam (11) is provided. The method is carried out in an electron beam apparatus (200) that comprises an aperture body (110) having at least one aperture opening (112). The method comprises directing the electron beam (11) onto two or more surface portions of the aperture body (110) on two or more sides of the at least one aperture opening (112) to generate an electron beam-induced deposition pattern (120) configured to act as a multipole in a charged state, particularly configured to act as a quadrupole, a hexapole and/or an octupole. The electron beam-induced deposition pattern (120) can be an electron beam-induced carbon or carbonaceous pattern. Further provided are methods of influencing an electron beam in an electron beam apparatus, particularly with a multipole device as described herein. Further provided is a multipole device for influencing an electron beam in an electron beam apparatus in a predetermined manner.

Abstract: A lens for a charged particle beam apparatus, the lens having lens components, is described. The lens includes a first magnetic lens having an upper pole piece and a middle pole piece; a second magnetic lens having the middle pole piece and a lower pole piece; a first coil arranged in the first magnetic lens and to provide a first magnetic field between the upper pole piece and the middle pole piece; a second coil arranged in the second magnetic lens and to provide a second magnetic field between the middle pole piece and the lower pole piece; and an electrostatic lens having an upper electrode and a lower electrode, wherein at least one of a first inner diameter defined by the upper pole piece and a second inner diameter defined by the middle pole piece is larger than a third inner diameter of the lower pole piece.

Abstract: A corrector for correcting aberrations of a charged particle beam in a charged particle beam device is described. The corrector includes a plurality of wires configured to be in a plane perpendicular to a beam axis. The wires forming two or more openings for passing of the charged particle beam through the two or more openings. The plurality of wires includes at least a first wire having a first connector configured to provide a first voltage to the first wire and a second wire having a second connector configured to provide a second voltage to the second wire. The second voltage being different than the first voltage.

Abstract: A method of determining a brightness (Br) of a charged particle beam (11) focused by a focusing lens (120) toward a sample (10) in a charged particle beam imaging device (100) is described. The method includes (a) taking one or more images (hf, 1 . . . N) of the sample with the charged particle beam imaging device; (b) retrieving one or more beam profiles (gf, 1 . . . N) of the charged particle beam from the one or more images; and (c) determining the brightness (Br) of the charged particle beam (11) based on at least the one or more beam profiles (gf, g1 . . . N), a probe current (Ip) of the charged particle beam, and a landing potential (LE) of the charged particle beam. Optionally, the brightness (Br) determined as above can be used for determining a size (Dvirt) of a source (105) of the charged particle beam (11). Further, a charged particle beam imaging device (100) configured for any of the methods described herein is provided.

Abstract: A magnetic multipole device for influencing a charged particle beam propagating along an optical axis is provided. The magnetic multipole device includes a first magnetic deflector for deflecting the charged particle beam in an x-direction with a plurality of first saddle coils; and a second magnetic deflector for deflecting the charged particle beam in a y-direction perpendicular to the x-direction with a plurality of second saddle coils. The first and second saddle coils are arranged around the optical axis in a 12-pole magnetic corrector structure with 12 poles provided at uniformly spaced angular intervals. The 12-pole magnetic corrector structure is configured to exert a beam correction field of a magnetic 12-pole corrector on the charged particle beam. Further provided are a charged particle beam apparatus with a magnetic multipole device and a method of influencing a charged particle beam propagating along an optical axis with a magnetic multipole device as described herein.

Abstract: It is provided a current measurement module 100 for measuring a current of a primary charged particle beam 123 of a charged particle beam device, the current measurement module 100 including a detection unit 160 configured for detecting secondary and/or backscattered charged particles 127 released on impingement of the primary charged particle beam 123 on a conductive surface 142 of a beam dump 140 of the charged particle beam device.

Abstract: A method of determining aberrations of a charged particle beam (11) focused by a focusing lens (120) toward a sample (10) in a charged particle beam system is described. The method includes: (a) taking one or more images of the sample at one or more defocus settings to provide one or more taken images (h1...N); (b) simulating one or more images of the sample taken at the one or more defocus settings based on a set of beam aberration coefficients (iC) and a focus image of the sample to provide one or more simulated images; (c) comparing the one or more taken images and the one or more simulated images for determining a magnitude (Ri) of a difference therebetween; and (d) varying the set of beam aberration coefficients (iC) to provide an updated set of beam aberration coefficients (i+1C) and repeating (b) and (c) using the updated set of beam aberration coefficients (i+1C) in an iterative process for minimizing said magnitude (Ri).

Abstract: A method of determining aberrations of a charged particle beam (11) focused by a focusing lens (120) with a given numerical aperture (NA) toward a sample (10) in a charged particle beam system is described. The method includes: (a.) simulating, based at least on the given numerical aperture (NA), one or more beam cross sections at one or more first defocus settings for each of two or more different values of a first beam aberration coefficient (C1) of a set of beam aberration coefficients (C1 . . . n), to provide a plurality of first simulated beam cross sections; (b.) extracting two or more values of a first aberration characteristic (˜C1) that is related to the first beam aberration coefficient (C1) from the plurality of first simulated beam cross sections; (c.) determining a first dependency between the first beam aberration coefficient (C1) and the first aberration characteristic (˜C1); (d.

Abstract: A method of determining a beam convergence of a charged particle beam (11) focused by a focusing lens (120) toward a sample (10) in a charged particle beam system (100) is provided. The method includes (a) taking one or more images of the sample when the sample is arranged at one or more defocus distances from a respective beam focus of the charged particle beam; (b) retrieving one or more beam cross sections from the one or more images; (c) determining one or more beam widths from the one or more beam cross sections; and (d) calculating at least one beam convergence value based on the one or more beam widths and the one or more defocus distances. Further, a charged particle beam system for imaging and/or inspecting a sample that is configured for any of the methods described herein is provided.

Abstract: It is provided a charged particle beam manipulation device for a plurality of charged particle beamlets, the charged particle beam manipulation device including a lens having a main optical axis, the lens including at least a first array of multipoles, each multipole of the first array of multipoles configured to compensate for a lens deflection force on a respective charged particle beamlet of the plurality of charged particle beamlets, the lens deflection force being a deflection force produced by the lens on the respective charged particle beamlet towards the main optical axis of the lens.

Abstract: An electron microscope (100) is described. The electron microscope comprises an electron source (110) for generating an electron beam, a condenser lens (130) for collimating the electron beam downstream of the electron source, and an objective lens (140) for focusing the electron beam onto a specimen (16). The electron source comprises a cold field emitter with an emission tip (112), an extractor electrode (114) for extracting the electron beam (105) from the cold field emitter for propagation along an optical axis (A), the extractor electrode having a first opening (115) configured as a first beam limiting aperture, a first cleaning arrangement (121) for cleaning the emission tip (112) by heating the emission tip, and a second cleaning arrangement (122) for cleaning the extractor electrode (114) by heating the extractor electrode. Further described is a method of operating such an electron microscope.

Abstract: A method of determining aberrations of a charged particle beam (11) focused by a focusing lens (120) toward a sample (10) in a charged particle beam system is described. The method includes: (a) taking one or more images of the sample at one or more defocus settings to provide one or more taken images (h1...N); (b) simulating one or more images of the sample taken at the one or more defocus settings based on a set of beam aberration coefficients (iC) and a focus image of the sample to provide one or more simulated images; (c) comparing the one or more taken images and the one or more simulated images for determining a magnitude (Ri) of a difference therebetween; and (d) varying the set of beam aberration coefficients (iC) to provide an updated set of beam aberration coefficients (i+1C) and repeating (b) and (c) using the updated set of beam aberration coefficients (i+1C) in an iterative process for minimizing said magnitude (Ri).

Abstract: A method of determining a beam convergence of a charged particle beam (11) focused by a focusing lens (120) toward a sample (10) in a charged particle beam system (100) is provided. The method includes (a) taking one or more images of the sample when the sample is arranged at one or more defocus distances from a respective beam focus of the charged particle beam; (b) retrieving one or more beam cross sections from the one or more images; (c) determining one or more beam widths from the one or more beam cross sections; and (d) calculating at least one beam convergence value based on the one or more beam widths and the one or more defocus distances. Further, a charged particle beam system for imaging and/or inspecting a sample that is configured for any of the methods described herein is provided.

Abstract: A method of influencing a charged particle beam (11) propagating along an optical axis (A) is described. The method includes: guiding the charged particle beam (11) through at least one opening (102) of a multipole device (100, 200) that comprises a first multipole (110, 210) with four or more first electrodes (111, 211) and a second multipole (120, 220) with four or more second electrodes (121, 221) arranged in the same sectional plane, the first electrodes and the second electrodes being arranged alternately around the at least one opening (102); and at least one of exciting the first multipole to provide a first field distribution for influencing the charged particle beam in a first manner, and exciting the second multipole to provide a second field distribution for influencing the charged particle beam in a second manner.

Abstract: Provided is an aberration corrector having a plurality of magnetic poles including a first magnetic pole and further magnetic poles, a ring that magnetically connects the plurality of magnetic poles with one another, the ring having a constant spacing to at least the first magnetic pole, a plurality of magnetic field modulators including a first magnetic field modulator and further magnetic field modulators, and a plurality of guides including a first guide and further guides; wherein the first magnetic field modulator includes a soft magnetic material, wherein the first magnetic field modulator is disposed in a first position, the first position being one of the following: adjacent to a first air gap separating the first magnetic pole and the ring, or at an inner ring surface or radially outward of the inner ring surface along an axis of the first magnetic pole, and wherein the first guide constrains the first magnetic field modulator to positions along a first axis substantially parallel to or coincident wi