Abstract: A semiconductor device is provided that includes an epitaxial layer disposed on a semiconductor substrate, the epitaxial layer including an active region, in which at least one active element is formed, and an edge termination region, in which at least one edge termination structure is formed, the edge termination region being laterally adjacent to the active region. The semiconductor device further includes a charged layer disposed on an upper surface of the epitaxial layer, the charged layer covering at least a portion of the active region and extending laterally over at least a portion of the edge termination region. Active trenches may be formed in the active region, and at least one edge trench may be formed in the edge termination region. The charged layer may be formed on sidewalls of each of the active trenches and the edge trench using atomic layer deposition in a same processing step.