Abstract: An object is to provide an operating body detection device having improved reliability of a capacitance-type sensor in input detection. An operating body detection device comprising: a capacitance-type sensor having a capacitance sensing surface on which a plurality of sensing electrodes is arranged; and a heat source sensing sensor comprising a heat source sensing film having a heat source sensing membrane with a heat source sensing surface. The detection surface that detects an operating body may have a region in which the capacitance sensing surface and the heat source sensing surface overlap when viewed from a normal direction of the detection surface. Preferably, the control unit that controls the capacitance-type sensor and the heat source sensing sensor starts heat source measurement with the heat source sensing sensor on condition that an object is detected with the capacitance-type sensor.

Abstract: A piezoelectric film which is better in heat and deformation resistant properties than those in the prior art is provided along with a method of manufacture. The film is a piezoelectric film that is composed of a copolymer of vinylidene fluoride and trifluoroethylene, the copolymer having a content of vinylidene fluoride in a range of not less than 82 mol % and not more than 86 mol % and having a molecular weight not less than 600,000. The piezoelectric film is subjected to a heat treatment for crystallization of the copolymer at a temperature ranging from not less than 140° C. to not more than 150° C., and is thereby caused to develop piezoelectric property. The piezoelectric film further has a heat resistance of not less than 140° C. and a breaking distortion of not less than 8% and not more than 55%, and an excellent deformation resistant property.

Abstract: A production method of a hole blocking layer includes: a liquid layer forming step that causes a liquid composition and a surface of a member on which the hole blocking layer is to be formed, to contact with each other thereby forming a liquid layer comprising the liquid composition on the surface of the member on which the hole blocking layer is to be formed, the liquid composition containing a zinc source comprising bis(acetylacetonato)zinc, a complexing agent comprising acetylacetone, and a polar solvent; and a drying step that heats the liquid layer formed by the liquid layer forming step to vaporize the complexing agent and the polar solvent from the liquid layer thereby forming a hole blocking layer comprising zinc oxide on the surface of the member on which the hole blocking layer is to be formed.

Abstract: Provided is a hole-blocking layer which has excellent basic characteristics such as high photoelectric conversion efficiency, while exhibiting excellent productivity. The hole-blocking layer is produced by a process that has a step of bringing an aqueous solution containing hydrogen peroxide and titanium (IV) oxysulfate into contact with the surface of a member on which the hole-blocking layer is to be formed, and holding the contact between the aqueous solution and the member at 50 to 120° C., so that an amorphous titanium oxide precursor precipitates on the surface of the member; and a step of drying the amorphous titanium oxide precursor that has precipitated on the member.

Abstract: A transparent piezoelectric sheet-with-a-frame includes a transparent piezoelectric sheet and a frame covering a peripheral edge portion of the transparent piezoelectric sheet. The transparent piezoelectric sheet includes one transparent piezoelectric film including an organic polymer, one first transparent plate electrode placed on a first main surface of the transparent piezoelectric film and having a first transparent plate electrode portion, and one second transparent plate electrode placed on a second main surface of the transparent piezoelectric film and having a second transparent plate electrode portion. An outline of the second transparent plate electrode portion is positioned inside an outline of the first transparent plate electrode portion as seen in a plan view. The outline of the first transparent plate electrode portion completely coincides with the frame, and the outline of the second transparent plate electrode portion does not at all coincide with the frame as seen in the plan view.

Abstract: A transparent piezoelectric sheet includes a quadrilateral-shaped transparent piezoelectric film and a first transparent plate electrode. The quadrilateral-shaped transparent piezoelectric film includes an organic polymer. The quadrilateral-shaped transparent piezoelectric film has entire main surfaces that are piezoelectric. The first transparent plate electrode is layered on part of a first main surface of the main surfaces of the transparent piezoelectric film. One to three sides of the four sides of the quadrilateral shape of the transparent piezoelectric film and area(s) of the first main surface adjacent thereto are not covered by the first transparent plate electrode.

Abstract: A production method of a hole blocking layer includes: a liquid layer forming step that causes a liquid composition and a surface of a member on which the hole blocking layer is to be formed, to contact with each other thereby forming a liquid layer comprising the liquid composition on the surface of the member on which the hole blocking layer is to be formed, the liquid composition containing a zinc source comprising bis(acetylacetonato)zinc, a complexing agent comprising acetylacetone, and a polar solvent; and a drying step that heats the liquid layer formed by the liquid layer forming step to vaporize the complexing agent and the polar solvent from the liquid layer thereby forming a hole blocking layer comprising zinc oxide on the surface of the member on which the hole blocking layer is to be formed.

Abstract: A gas sensor, which is extremely compact to be arranged for separated gas piping in semiconductor device manufacturing equipment, a gas measuring system using such gas sensor, and a gas detection module for the gas measuring system. The gas sensor has a gas detection device containing a dielectric semiconductor, the electric conductivity of the gas detection device varying in response to the degree of adsorption of gases to the gas detection device, a capacitive element connected in series to the gas detection device, and a pair of electrodes which are connected to electric terminals of an electric element comprising the gas detection device and the capacitive element, wherein the gas sensor is capable of detecting the degree of adsorption of gases to the gas detection device from an electrical response to a voltage which is applied to the electrodes and which periodically varies and reverses in polarity.

Abstract: A gas sensor, which is extremely compact to be arranged for separated gas piping in semiconductor device manufacturing equipment, a gas measuring system using such gas sensor, and a gas detection module for the gas measuring system. The gas sensor has a gas detection device containing a dielectric semiconductor, the electric conductivity of the gas detection device varying in response to the degree of adsorption of gases to the gas detection device, a capacitive element connected in series to the gas detection device, and a pair of electrodes which are connected to electric terminals of an electric element comprising the gas detection device and the capacitive element, wherein the gas sensor is capable of detecting the degree of adsorption of gases to the gas detection device from an electrical response to a voltage which is applied to the electrodes and which periodically varies and reverses in polarity.

Abstract: A transparent piezoelectric sheet-with-a-frame includes a transparent piezoelectric sheet and a frame covering a peripheral edge portion of the transparent piezoelectric sheet. The transparent piezoelectric sheet includes one transparent piezoelectric film including an organic polymer, one first transparent plate electrode placed on a first main surface of the transparent piezoelectric film and having a first transparent plate electrode portion, and one second transparent plate electrode placed on a second main surface of the transparent piezoelectric film and having a second transparent plate electrode portion. An outline of the second transparent plate electrode portion is positioned inside an outline of the first transparent plate electrode portion as seen in a plan view. The outline of the first transparent plate electrode portion completely coincides with the frame, and the outline of the second transparent plate electrode portion does not at all coincide with the frame as seen in the plan view.

Abstract: A transparent piezoelectric sheet includes a quadrilateral-shaped transparent piezoelectric film and a first transparent plate electrode. The quadrilateral-shaped transparent piezoelectric film includes an organic polymer. The quadrilateral-shaped transparent piezoelectric film has entire main surfaces that are piezoelectric. The first transparent plate electrode is layered on part of a first main surface of the main surfaces of the transparent piezoelectric film. One to three sides of the four sides of the quadrilateral shape of the transparent piezoelectric film and area(s) of the first main surface adjacent thereto are not covered by the first transparent plate electrode.

Abstract: Provided is a hole-blocking layer which has excellent basic characteristics such as high photoelectric conversion efficiency, while exhibiting excellent productivity. The hole-blocking layer is produced by a process that has a step of bringing an aqueous solution containing hydrogen peroxide and titanium (IV) oxysulfate into contact with the surface of a member on which the hole-blocking layer is to be formed, and holding the contact between the aqueous solution and the member at 50 to 120° C., so that an amorphous titanium oxide precursor precipitates on the surface of the member; and a step of drying the amorphous titanium oxide precursor that has precipitated on the member.

Abstract: An element capable of manufacturing various devices of any shape having plasticity or flexibility without being limited by shape and a method for manufacturing thereof are provided. An element characterized by that a circuit element is formed continuously or intermittently in the longitudinal direction. An element characterized by that a cross section having a plurality of areas forming a circuit is formed continuously or intermittently in the longitudinal direction.

Abstract: A gas sensor, which is extremely compact to be arranged for separated gas piping in semiconductor device manufacturing equipment, a gas measuring system using such gas sensor, and a gas detection module for the gas measuring system. The gas sensor has a gas detection device containing a dielectric semiconductor, the electric conductivity of the gas detection device varying in response to the degree of adsorption of gases to the gas detection device, a capacitive element connected in series to the gas detection device, and a pair of electrodes which are connected to electric terminals of an electric element comprising the gas detection device and the capacitive element, wherein the gas sensor is capable of detecting the degree of adsorption of gases to the gas detection device from an electrical response to a voltage which is applied to the electrodes and which periodically varies and reverses in polarity.

Abstract: A sensor whose size can be decreased without marring the performance and which can be installed in a narrow place, an electric device, and a method for easily manufacturing the electric device. By vacuum deposition of semiconductor on a columnar body or by applying a melt, solution, or gel of semiconductor to the columnar body, a coating of semiconductor is formed. Four insulating wires, a stripe band of the connected four insulating wires are wound around the columnar body. Then, one of the insulating wires is removed to form a copper wire in the vacant portion by copper vacuum deposition. Lastly, another insulating wire not adjacent to the copper wire is removed to form an aluminum wire in the vacant portion by aluminum vacuum deposition. By measuring the resistance between the copper and aluminum wires, the intensity of light striking the semiconductor can be determined.

Abstract: Integrated circuits such as semiconductor memories, image sensors, PLA's, and the like have been formed on rigid, planar substrates such as silicon substrates. This has resulted in shapes without flexibility and limited applicabilities. Further, since multiple circuit elements are continuously formed on a flat surface, it has been impossible to produce a non-defective semiconductor memory unless all the circuit elements are fabricated without defects, making it difficult to improve a yield. It is thus devised to weave or braid linear devices into a fabric shape to prepare a planar semiconductor memory, or to bundle up linear devices to prepare a linear semiconductor memory. The integrated circuit comprising the linear devices is flexible and light-weighted, and is thus usable in various applications. It becomes possible to prepare an integrated circuit by once fabricating linear devices and selecting only non-defective ones therefrom, thereby enabling an improved production yield of integrated circuits.

Abstract: An electron-emitting woven fabric according to the present invention is intended to provide an electron emission source that can be produced extremely easily, readily shaped to have a large area, and used for a wide variety of applications including a display device. The electron-emitting woven fabric according to the present invention is characterized in that first linear bodies 3 composed of a conductive layer 1 and an insulating layer 2 covering the conductive layer 1 and second linear bodies 4 of a conductive material are crossed. Another mode of the electron-emitting woven fabric according to the present invention is characterized in that a carbonaceous material is provided on a surface of each of crossed parts of the second linear bodies crossing the first linear bodies at lifted portions and/or sunk portions of the first linear bodies.

Abstract: A light-emitting element used for display devices and illuminating devices has been formed on a flat substrate, and therefore, when the size of such devices is increased, manufacturing apparatuses also have to be enlarged. Also, a problem involved has been that even a failure of one light-emitting element causes the entire device to fail, making improvement of production yield difficult. To solve the above problems, in the present invention, light-emitting elements are formed as linear elements, and the linear elements are combined to form a plane light-emitting device. This enables the light-emitting device to be produced by selecting only linear light-emitting elements of good quality, and enlargement of apparatuses and enhancement of production yield can be expected.

Abstract: A light-emitting element used for display devices and illuminating devices has been formed on a flat substrate, and therefore, when the size of such devices is increased, manufacturing apparatuses also have to be enlarged. Also, a problem involved has been that even a failure of one light-emitting element causes the entire device to fail, making improvement of production yield difficult. To solve the above problems, in the present invention, light-emitting elements are formed as linear elements, and the linear elements are combined to form a plane light-emitting device. This enables the light-emitting device to be produced by selecting only linear light-emitting elements of good quality, and enlargement of apparatuses and enhancement of production yield can be expected.

Abstract: Fullerenes are a novel material that has been expected to serve as a promising material in the construction of organic devices. However, the electric conductivity of fullerenes, which has been, reported heretofore spreads over a wide range including values corresponding to insulators as well as those corresponding to semiconductors. The present invention makes it possible to improve the conductivity of fullerenes highly reproducibly by heating the fullerenes at a specified temperature in an inert gas which is flowed under a specified condition, that is, by controlling the concentration of impurities, particularly oxygen and water adsorbed to the fullerenes.