Patents Assigned to IG Semicon Co., Ltd.
  • Method of forming electrode of semiconductor device
    Patent number: 5744398
    Abstract: A method of forming an electrode of a semiconductor device includes the steps of forming an insulating layer on a semiconductor substrate, forming a tungsten silicide layer on the insulating layer, implanting impurity ions into the tungsten silicide layer to form an impurity region in a lower portion of the tungsten silicide layer, and carrying out a heat treatment to the substrate on which the tungsten silicide layer is formed.
    Type: Grant
    Filed: January 23, 1997
    Date of Patent: April 28, 1998
    Assignee: IG Semicon Co., Ltd.
    Inventors: Jeong Soo Byun, Byung Hak Lee