Abstract: A semiconductor device, in particular an integrated circuit with protection against side channel attacks, in particular imaging- and probing-based attacks, EMA and reverse engineering, in which a metallic conductive layer of a first (104) and/or a second potential supply line (106) are each connected directly and individually to all the circuit components via respective individual conductor path structures (V1, V2).
Type:
Grant
Filed:
October 25, 2013
Date of Patent:
November 21, 2017
Assignee:
IHP GMBH—INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/LEIBNIZ-INSTITUT FUR INNOVATIVE MIKROELECTRONIK