Abstract: The invention is directed to a self-correcting modular-redundancy-memory device, comprising three bistable-memory elements and a majority voter. The bistable-memory elements receive respective binary data signal, clock signal, and a feedback signal. Each of the bistable-memory elements is configured, in response to the clock signal assuming a first value, to provide a binary output signal with an output-signal value correlated to a data-signal value of the data signal, and in response to the clock signal assuming a second clock-signal value, to provide the output signal with the output-signal value indicative of a current feedback-signal value of the feedback signal. The majority voter receives the output signals each of the bistable-memory elements and is configured to provide the feedback signal with the feedback-signal value indicative of that output-signal value taken on by a majority of the currently received output signals.

Abstract: A measuring carrier for position-resolved meteorological determination of a measurement variable dependent on the dielectric permittivity of a device under test. The measuring carrier has a supporting means comprising a measuring surface, to which the device under test can be applied, and a measuring transmission line which entirely or partially forms the measuring surface and comprises a multiplicity of transmission line cells for the purpose of transmitting a radio-frequency measurement signal which can be injected at the input port. The measuring surface is structured in a cellular manner, wherein each of the transmission line cells has a cell-individual propagation constant with respect to the radio-frequency measurement signal in a state free of a device under test. This constant differs from the respective cell-individual constants of the other transmission line cells.

Abstract: The invention relates to a gain-control stage (100) for generating gain-control signals (Vc+, Vc?) for controlling an external variable-gain amplifying unit (101). The gain-control stage comprises a first (102) and a second differential amplifier unit (112) that receive, at a respective input interface (104,114) a reference voltage signal (VRef) and a variable gain-control voltage signal (VGC). The second differential amplifier unit is configured to provide, via a second output interface (120), a control voltage signal (V1) to a controllable first current source (106) of the first differential amplifier unit (102). The first differential amplifier unit (102) is configured to provide, via a first output interface (110), the first and the second gain-control signal (VC+, VC?) in dependence on the variable gain-control voltage signal (VGC), the reference voltage signal (VRef) and a first biasing current (IB1) that depends on the control voltage signal.

Abstract: Method for producing a semiconductor device by providing a silicon wafer having a plurality of equal height raised portions on a first surface thereof; depositing an etch stop layer on the first surface; planarizing a surface of the etch stop layer; permanently bonding a first carrier wafer on the etch stop layer surface; producing components on or in a second wafer surface in a FEOL process; etching a plurality of trenches into the wafer, each trench formed at the respective location of one of the raised portions; depositing side wall insulation layers on side walls of the trenches; forming through-silicon vias by filling the trenches with electrically conductive material; producing a conductor path stack in a BEOL process for contacting the active components on the second surface; temporarily bonding a second carrier wafer onto a surface of the conductor path stack; removing the first carrier wafer and exposing the vias.

Abstract: The invention relates to an electrooptical device comprising a semiconductor substrate having a front side and a back side, at least one photonic component arranged on the front side of the semiconductor substrate, the photonic component comprising an active layer made of a non-linear optical material, wherein at least one cavity, extends through the semiconductor substrate and connects the active layer on the front side of the semiconductor substrate with the back side of the semiconductor substrate.

Abstract: The present invention relates to a phased array antenna (10) with an electronically variable antenna pattern, wherein control signals for at least two phased antenna elements (13) are processed for a broadcast transmission and are broadcast to the phased antenna elements (13) via a wireless medium or using feed lines for useful signal components of the phased antenna elements in a frequency band differing from the frequency band of the useful signal components. As a result of using the broadcast transmission in a different frequency band, there is no need for any additional signals or lines for the array antenna, and the complexity of the array antenna can be reduced and the flexibility and reconfigurability can be improved.

Abstract: The invention relates to an amplification circuit (100), comprising: a VGA (2), an AGC loop (10) for automatically controlling the gain of the VGA (2), a switching circuit (14) for switching between an AGC mode, in which the gain of the VGA (2) is automatically controlled by an output signal of the AGC loop (10) and a manual gain control, MGC, mode, in which the gain of the VGA (2) can be manually controlled by an input signal, and a read/write circuit (30) with a contact (31) for connection to a peripheral system, wherein the read/write circuit (30) is configured, in the MGC mode, to provide the input signal from the contact (31) via a write-mode path (32) to the VGA (2), and, in the AGC mode, to provide the output signal of the AGC loop (10) via a read-mode path (33) on the contact (31).

Abstract: A monolithically integrated MOS transistor, comprising a doped well region of a first conductivity type, an active MOS transistor region formed in the well region, comprising doped source and drain regions of a second conductivity type and at least one MOS channel region extending between the source and drain regions under a respective gate stack, and a dielectric isolation layer of the STI or LOCOS type and laterally surrounding same, wherein well portions of the well region adjoin the MOS channel region in the two opposite longitudinal directions oriented perpendicular to a notional connecting line extending from the source through the MOS channel region to the drain region, and which extend as far as a surface of the active MOS transistor region, so that the respective well portion adjoining the MOS channel region is arranged between the MOS channel region and the dielectric isolation layer.

Abstract: A device for multiplying two bit sequences has a controller that selects and activates exactly one multiplier unit from a plurality of parallel multiplier units, according to a random signal. A partial multiplier unit shared by all the multiplier units receives and multiplies operands formed by the respectively activated multiplier unit. Each multiplier unit implements a different multiplication method with a respective selector unit that selects segments of the bit sequences to be multiplied, in accordance with a selection plan adapted to the respective multiplication method, to form operands from one or more segments and outputs the operands. The respective accumulation unit receives step by step partial products from the partial multiplier unit, accumulates the partial products in accordance with an accumulation plan adapted to the implemented multiplication method and matching the selection plan, and outputs the calculated product of after accumulation has been completed.

Abstract: An integrated optical coupler device comprising, on a substrate surface: an integrated optical coupling grating extending in lateral directions parallel to the substrate surface and which, by diffraction at its grating structures, either converts electromagnetic waves, guided parallel to the substrate surface, of at least two waveguide modes of integrated optical waveguides into fiber modes propagating perpendicularly to the substrate surface, or converts electromagnetic waves, propagating perpendicularly to the substrate surface, of a fiber mode into electromagnetic waves, propagating parallel to the substrate surface, of at least two waveguide modes, and a first conductor pair, connected to the coupling grating and formed by a first and a second integrated optical waveguide, through which, in mutually opposite first and second directions parallel to the substrate surface, electromagnetic waves of at least two waveguide modes can be conducted to the coupling grating or can be conducted away from the coupling

Abstract: A method for producing a nanotip from a tip material provides a substrate which consists of the tip material or has the material in the form of a coating, produces a mask from a mask material selected so that, in a predefined reactive ion etching process, the mask material is removed at a lower etching rate than the tip material, and carries out the reactive ion etching process in an etching chamber. The mask material is additionally selected so that a gaseous component is released therefrom during the reactive ion etching process, the gaseous component not being released from the tip material. The method further comprises detecting the gaseous component while the ion etching process is being carried out, repeatedly determining whether an amount of the gaseous component in the etching chamber reaches a predefined lower threshold, and stopping the reactive ion etching process when the lower threshold is reached.

Abstract: Micro-electromechanical device for measuring the viscosity of a fluid, comprises a measuring chamber with a micromechanical actuator, arranged as a cantilever above a metallically conductive counter electrode, elastically deformable towards the counter electrode, surrounded by the fluid to be measured and made of a metallically conductive material, a two-terminal RF voltage source that can be switched off, having a first output terminal connected to the actuator, and a second output terminal connected to the counter electrode, and which is designed to output an RF voltage signal that is suitable for deflecting the actuator out of its rest position, and a measuring device to detect a change in the frequency, amplitude or phase of the RF signal in order to determine a measurement value for the viscosity-dependent speed at which the actuator is deformed.

Abstract: A diode comprising a light-sensitive germanium region which is totally embedded in silicon and forms with the silicon a lower interface and lateral interfaces, wherein the lateral interfaces do not extend perpendicularly, but obliquely to the lower interface and therefore produce a faceted form.

Abstract: A depletion-layer transistor comprising a base, an emitter and a collector, in which the emitter contains a tunnel diode which permits a tunnel current of charge carriers from the emitter in the direction of the collector when an emitter-base voltage above a first threshold voltage is applied in the direction of current flow, and in which the base contains a graphene layer.

Abstract: A digital polar modulator (DPM) for transforming a baseband signal into a modulated digital modulator output signal comprises an input unit and two low-pass delta-sigma modulators, a first one being connected downstream from the first input part and configured to provide at its output a first pulse train in dependence on an amplitude- modulating baseband signal component, and a second one being connected downstream from the second input part and configured to provide at its output a multilevel quantized signal in dependence on a phase modulating baseband signal component; a multiphase generator, which is configured to provide a set of square-wave carrier signals having a common carrier frequency and exhibiting discrete phase shifts with respect to each other; a multiplexer, which is configured to provide a multiplexer output signal that is formed by switching, in dependence on a signal received at a select input as a function of time, between selected ones of the carrier signals; and a combiner unit.

Abstract: A vertical heterobipolar transistor comprising a substrate of semiconductor material of a first conductivity type and an insulation region provided therein, a first semiconductor electrode arranged in an opening of the insulation region and comprising monocrystalline semiconductor material of a second conductivity type, which is either in the form of a collector or an emitter, and which has a first heightwise portion and an adjoining second heightwise portion which is further away from the substrate interior in a heightwise direction, wherein only the first heightwise portion is enclosed by the insulation region in lateral directions perpendicular to the heightwise direction, a second semiconductor electrode of semiconductor material of the second conductivity type, which is in the form of the other type of semiconductor electrode, a base of monocrystalline semiconductor material of the first conductivity type, and a base connection region having a monocrystalline portion which in a lateral direction laterall