Patents Assigned to IHW INC.
  • Patent number: 12586636
    Abstract: A neuromorphic system according to an embodiment of the invention includes an input signal section that generates an input signal, a synapse section that includes a plurality of synaptic units that receive the input signal and makes a current to flow according to a set weight, each of the plurality of synaptic units including a plurality of non-volatile memory cells capable of selectively storing a logical state, the non-volatile memory cells being arranged in a memory array that include input electrode lines and output electrode lines crossing each other, and generates an output signal for each output electrode line by the input signal, a digital calculation section that digitizes the output signal generated for each output electrode line and calculates a sum of the digitized output signals, and a controller section that controls the input signal section, the synapse section, and the digital calculation section, and the controller section designates the number of digitized digits for each output electrode li
    Type: Grant
    Filed: November 18, 2022
    Date of Patent: March 24, 2026
    Assignee: IHW INC.
    Inventors: Jun-sung Kim, Sang-hoon Yoon
  • Patent number: 12268104
    Abstract: An object of the present invention is to provide a composition, a memory structure suitable for the composition, a manufacturing method, and an operating method for stable operation in a memory element including a chalcogen compound. In order to achieve the object, in a memory array with a cross-point structure including a first electrode line and a second electrode line intersecting each other, and a selective memory element disposed at each intersection of the first electrode line and the second electrode line and being a chalcogen compound, the present invention may provide the memory array with a cross-point structure including the first electrode line formed on a substrate, a first functional electrode formed between the first electrode line and the selective memory element, and a second functional electrode formed between the second electrode line and the selective memory element, wherein the first functional electrode is formed as a line along the first electrode line.
    Type: Grant
    Filed: November 13, 2020
    Date of Patent: April 1, 2025
    Assignee: IHW INC.
    Inventors: Jun-sung Kim, Seung-hwan Lee, Sang-hoon Yoon