Abstract: A diode laser bar assembly is formed to exhibit a relatively low thermal resistance, which also providing an increased range of conditions over which the internal stress conditions may be managed. In particular, the submount configuration of the prior art is replaced by a pair of platelets, disposed above and below the diode laser bar so as to form a “sandwich” structure. The bottom platelet is disposed between the heatsink (cooler) and the diode laser bar. Thus, the bottom platelet may be relatively thin, creating a low thermal resistance configuration. The combination of the top and bottom platelets provides the ability to create various configurations and designs that best accommodate stress conditions for a particular situation.

Abstract: A broad area laser diode is configured to include an anti-guiding layer located outside of the active region of the device. The anti-guiding layer is formed of a high refractive index material that serves to de-couple unwanted, higher-order lateral modes (attributed to thermal lensing problems) from the lower-order mode output beam of output signal from the laser diode. The anti-guiding layer is formed using a single epitaxial growth step either prior to or subsequent to the steps used to grow the epitaxial layers forming the laser diode itself, thus creating a structure that provides suppression of unwanted higher-order modes without requiring a modification of specific process steps used to fabricate the laser diode itself.

Abstract: A broad area laser diode is configured to include an anti-guiding layer located outside of the active region of the device. The anti-guiding layer is formed of a high refractive index material that serves to de-couple unwanted, higher-order lateral modes (attributed to thermal lensing problems) from the lower-order mode output beam of output signal from the laser diode. The anti-guiding layer is formed using a single epitaxial growth step either prior to or subsequent to the steps used to grow the epitaxial layers forming the laser diode itself, thus creating a structure that provides suppression of unwanted higher-order modes without requiring a modification of specific process steps used to fabricate the laser diode itself.

Abstract: A diode laser bar assembly is formed to exhibit a relatively low thermal resistance, which also providing an increased range of conditions over which the internal stress conditions may be managed. In particular, the submount configuration of the prior art is replaced by a pair of platelets, disposed above and below the diode laser bar so as to form a “sandwich” structure. The bottom platelet is disposed between the heatsink (cooler) and the diode laser bar. Thus, the bottom platelet may be relatively thin, creating a low thermal resistance configuration. The combination of the top and bottom platelets provides the ability to create various configurations and designs that best accommodate stress conditions for a particular situation.

Abstract: Devices and methods for maintaining the brightness of laser emitter bar outputs having multiple emitters for coupling and other applications. In some embodiments, at least one brightness enhancement optic may be used in combination with a beam reformatting optic.

Abstract: Optical systems and components thereof are disclosed which may be used for efficiently coupling laser energy into an optical conduit while maintaining a homogenous beam output from the optical conduit. Some embodiments are directed more specifically to far field beam homogenization of optical fiber coupled radiation.

Abstract: Semiconductor laser diodes, particularly broad area single emitter (BASE) laser diodes of high light output powers are commonly used in opto-electronics. Light output power and stability of such laser diodes are of crucial interest and any degradation during normal use is a significant disadvantage. The present invention concerns an improved design of such laser diodes, the improvement in particular significantly minimizing or avoiding (front) end section degradation at very high light output powers by controlling the current flow in the laser diode in a defined way. This is achieved by controlling the carrier injection, i.e. the injection current, into the laser diode in a novel way by creating single current injection points along the laser diode's longitudinal extension, e.g. along the waveguide. Further, the supply current/voltage of each single or group of current injection point(s) may be separately regulated, further enhancing controllability of the carrier injection.

Abstract: A semiconductor laser diode comprises a semiconductor body having an n-region and a p-region laterally spaced apart within the semiconductor body. The laser diode is provided with an active region between the n-region and the p-region having a front end and a back end section, an n-metallization layer located adjacent the n-region and having a first injector for injecting current into the active region, and a p-metallization layer opposite to the n-metallization layer and adjacent the p-region and having a second injector for injecting current into the active region. The thickness and/or width of at least one metallization layer is chosen so as to control the current injection in a part of the active region near at least one end of the active region compared to the current injection in another part of the active region. The width of the at least one metallization layer is larger than a width of the active region.

Abstract: Devices and methods for maintaining the brightness of laser emitter bar outputs having multiple emitters for coupling and other applications. In some embodiments, at least one brightness enhancement optic may be used in combination with a beam reformatting optic.