Patents Assigned to Iinfineon Technologies AG
  • Vias and Methods of Formation Thereof
    Publication number: 20150348903
    Abstract: In accordance with an embodiment of the present invention, a semiconductor device includes a first metal line disposed in a first insulating layer, and a via having a portion surrounding a portion of a first sidewall of the first metal line.
    Type: Application
    Filed: June 2, 2014
    Publication date: December 3, 2015
    Applicant: Iinfineon Technologies AG
    Inventor: Hanno Melzner