Patents Assigned to IMAN REZANEZHAD GATABI
  • Semiconductor devices with sharp gate edges and methods to fabricate same
    Patent number: 9406758
    Abstract: This application discloses semiconductor devices with sharp gate edges including 2D and 3D memory cells, High Electron Mobility Transistors and tri-gate transistors. Implementation of a gate with sharp edges may improve the read and write speed and reduce the program and erase voltages in memory cells. It may also improve the gate control over the channel in tri-gate transistors and HEMTs. Methods to fabricate such devices are also disclosed.
    Type: Grant
    Filed: June 14, 2015
    Date of Patent: August 2, 2016
    Assignee: IMAN REZANEZHAD GATABI
    Inventor: Iman Rezanezhad Gatabi