Abstract: Disclosed are methods for selective deposition of doped Group IV-Sn materials. In some embodiments, the method includes providing a patterned substrate comprising at least a first region and a second region, where the first region includes an exposed first semiconductor material and the second region includes an exposed insulator material, and performing at least two cycles of a grow-etch cyclic process. Each cycle includes depositing a doped Group IV-Tin (Sn) layer, where depositing the doped Group IV-Sn layer includes providing a Group IV precursor, a Sn precursor, and a dopant precursor, and using an etch gas to etch back the deposited doped Group IV-Sn layer.

Abstract: A winch (1) for pulling a cable (C) for maneuvering a load is composed of two motorized drums (3) each including an active cylindrical peripheral surface (5) equipped with several annular grooves (6), the cable intended to be wound around the two drums (3) according to a helical arrangement. The motorized drums are each formed from at least three pulleys (11), that can each be rotated around a common central axis (10), cooperating with their own dedicated motor element (4) and including a cylindrical peripheral surface equipped with at least one of the grooves: two pulleys known as outer pulleys (11a, 11d), positioned between which is at least one pulley known as a central pulley (11b, 11c). The central pulleys include at least one axial cylindrical extension, the cylindrical peripheral surface of which constitutes a rotation bearing for the central cylindrical surface of at least one of the other pulleys.