Patents Assigned to Imo Delaval Incorporated
  • Patent number: 4906210
    Abstract: An electrical connector comprises a plug having an elongate prong releasably received in a hollow receptacle and retained for electrical contact by a retainer. An improvement of that electrical contact is achieved by tensioning the prong in the receptacle against the retainer. A spring may be tensioned for that purpose in the receptacle between that receptacle and the prong.
    Type: Grant
    Filed: August 15, 1988
    Date of Patent: March 6, 1990
    Assignee: IMO Delaval Incorporated
    Inventor: Richard A. McNiel
  • Patent number: 4753517
    Abstract: Electrooptical light gating methods and apparatus divide pluralities of light gates into distinct groups, each extending along a light gate structure. The light gates are staggered in at least one of these groups relative to light gates in at least another of the groups. At least two of the groups may be arranged on the same light gate structure, and light gates in one of these two groups are then staggered relative to light gates in the other of the two groups on the same light gate structure. On the other hand, at least two of the groups may be arranged on at least two different light gate structures, and light gates on one of the two light gate structures are then staggered relative to light gates on the other of such two light gate structures.
    Type: Grant
    Filed: May 20, 1982
    Date of Patent: June 28, 1988
    Assignee: IMO Delaval Incorporated
    Inventor: Norbert E. Samek
  • Patent number: 4737756
    Abstract: Differential transducers for corrosive or electrically conductive fluids have a first tube for guiding such fluids toward one side of a semiconductor diaphragm containing embedded strain gages, and a second tube for guiding such fluids toward an opposite side of that semiconductor diaphragm. These tubes are made of an electrically insulating material temporarily convertible to an electrical conductor for electrostatic bonding. The semiconductor diaphragm is provided in a semiconductor wafer extending beyond the perimeter of at least the first tube. The strain gages are provided with embedded electrical leads extending beyond the above mentioned perimeter for attachment of electrical contact wires outside the first tube, while providing these leads inlaid in the semiconductor wafer at least in a region to be covered by the first tube.
    Type: Grant
    Filed: January 8, 1987
    Date of Patent: April 12, 1988
    Assignee: Imo Delaval Incorporated
    Inventor: Ronald Bowman