Patents Assigned to IMP Inc.
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Patent number: 5581536Abstract: A circuit for detecting when peaks occur in an amplitude modulated electrical signal, and for measuring in real time the amplitudes of the detected peaks. The circuit delays the input signal a short time, and then notes when the input signal and its delayed version have the same amplitude, thereby to detect when a peak has occurred. The amplitude of the peak is then measured. This circuit and technique have particular advantages when used as part of a servo control system that positions a read/write head to accurately follow moving tracks of recorded data on magnetic tape, magnetic disks, optical disks, and the like.Type: GrantFiled: June 7, 1995Date of Patent: December 3, 1996Assignee: IMP, Inc.Inventors: Hans W. Klein, Sriram Narayan
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Patent number: 5565375Abstract: A self-cascoding transconductance circuit has cascoding and current sink/source FETs, serially connected with their gates tied together to receive an input voltage, wherein the cascoding FET has a threshold voltage having an absolute value at least 0.1 volts less than that of the current sink/source FET to ensure that the current sink/source FET operates in its saturated region. A CMOS structure implementing the self-cascoding transconductance circuit has two doped threshold adjust regions formed beneath a gate electrode such that the two doped threshold adjust regions respectively effectuate the cascode and current sink/source FETs which then share the gate electrode. A method of forming the CMOS structure includes forming two self-cascoding transconductance circuits electrically connected in parallel such that they share a common drain region between their respective gate electrodes, and each has one source region.Type: GrantFiled: March 16, 1995Date of Patent: October 15, 1996Assignee: IMP, Inc.Inventors: Douglas L. Hiser, Kou-Hung L. Loh
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Patent number: 5565815Abstract: A balanced current amplifier mirrors either a fully differential or single ended input signal into common output circuits in a manner to generate a fully differential output signal without any d.c. bias. Input signal nodes are maintained at a desired voltage by circuit elements other than those of the current mirror circuits, thus freeing the current mirroring elements from having to be sized for this purpose. The sizes of the output transistors are adjustable in order to set the gain of the circuit. In addition to amplifier circuits, a full-wave rectifier, a comparator, and a filter, all operating with current signals, are described. A single circuit module may include all of these circuits with a user provided the capability to program the module to perform any one or more of these functions.Type: GrantFiled: May 24, 1994Date of Patent: October 15, 1996Assignee: IMP, Inc.Inventor: Hans W. Klein
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Patent number: 5554957Abstract: A balanced current amplifier mirrors either a fully differential or single ended input signal into common output circuits in a manner to generate a fully differential output signal without any d.c. bias. Input signal nodes are maintained at a desired voltage by circuit elements other than those of the current mirror circuits, thus freeing the current mirroring elements from having to be sized for this purpose. The sizes of the output transistors are adjustable in order to set the gain of the circuit. In addition to amplifier circuits, a full-wave rectifier, a comparator, and a filter, all operating with current signals, are described. A single circuit module may include all of these circuits with a user provided the capability to program the module to perform any one or more of these functions.Type: GrantFiled: June 7, 1995Date of Patent: September 10, 1996Assignee: IMP, Inc.Inventor: Hans W. Klein
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Patent number: 5493251Abstract: A method of threshold adjust implantation which involves the implanting of some of the PMOS FETs' channels on a CMOS circuit so the PMOS FETs have a threshold voltage of substantially zero volts, the implanting involves an additional implantation of ions into the PMOS FET' channels in addition to the implantation required to raise the PMOS FET' threshold voltage from the native threshold voltage to the normal threshold voltage.Type: GrantFiled: December 2, 1994Date of Patent: February 20, 1996Assignee: IMP, Inc.Inventors: Moiz Khambaty, Corey D. Petersen
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Patent number: 5463603Abstract: An integrated circuit adapted for use in a data path of a disk storage system of a type wherein data is recorded at different rates depending upon the storage track of the data and includes servo bursts of head positioning signals disbursed throughout the data on all of the tracks. The circuit includes a variable cut off low pass filter that is adjusted both for the rate of data being read and for the rate of the servo bursts when being read. An automatic gain control and a pulse detector are similarly dynamically adjusted in characteristics to fit that of the data and servo bursts when each is being read from the disk. An output of the filter provides both read data and head positioning signals. A write data path is also provided as part of the circuit.Type: GrantFiled: January 29, 1993Date of Patent: October 31, 1995Assignee: IMP, Inc.Inventor: Corey D. Petersen
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Patent number: 5463349Abstract: A digitally programmable Bessel filter includes a plurality of serially connected stages or biquads with each biquad including a plurality of programmable operational transconductance amplifiers. The first stage of the filter provides an all pass equal amplitude response. Two stages provide pulse slimming (first and second derivatives of an input pulse), and three stages provides a sixth order Bessel low pass function. The operational transconductance amplifiers are controlled by a fine tuning control signal, and an array of integrating capacitors are selectively controlled by a coarse tuning signal. The fine tuning and coarse tuning signals are generated in a phase locked loop from a reference clock and a reference biquad which receives the reference clock.Type: GrantFiled: June 20, 1994Date of Patent: October 31, 1995Assignee: IMP, Inc.Inventors: Corey D. Petersen, Douglas L. Hiser, Jaime E. Kardontchik
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Patent number: 5444579Abstract: A preamplifier provides an output signal which follows a varying resistance of a sensor of a condition or parameter. An example sensor is a magneto-resistive head employed in computer mass storage systems to read magnetic signals recorded on a magnetic tape or disk. The preamplifier uses a current-mode amplifier to increase its bandwidth and reduce signal distortion. A current source, used with the preamplifier or some other circuit, includes a low pass filter to reduce the effects of various noise sources.Type: GrantFiled: December 17, 1993Date of Patent: August 22, 1995Assignee: IMP, Inc.Inventors: Hans W. Klein, Moises E. Robinson
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Patent number: 5407849Abstract: A method of threshold adjust implantation which involves the implanting of some of the PMOS FETs' channels on a CMOS circuit so the PMOS FETs have a threshold voltage of substantially zero volts, the implanting involves an additional implantation of ions into the PMOS FETs' channels in addition to the implantation required to raise the PMOS FETs' threshold voltage from the native threshold voltage to the normal threshold voltage.Type: GrantFiled: June 23, 1992Date of Patent: April 18, 1995Assignee: IMP, Inc.Inventors: Moiz Khambaty, Corey D. Petersen
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Patent number: 5401987Abstract: A self-cascoding transconductance circuit has cascoding and current sink/source FETs, serially connected with their gates tied together to receive an input voltage, wherein the cascoding FET has a threshold voltage having an absolute value at least 0.1 volts less than that of the current sink/source FET to ensure that the current sink/source FET operates in its saturated region. A CMOS structure implementing the self-cascoding transconductance circuit has two doped threshold adjust regions formed beneath a gate electrode such that the two doped threshold adjust regions respectively effectuate the cascode and current sink/source FETs which then share the gate electrode. A method of forming the CMOS structure includes forming two self-cascoding transconductance circuits electrically connected in parallel such that they share a common drain region between their respective gate electrodes, and each has one source region.Type: GrantFiled: December 1, 1993Date of Patent: March 28, 1995Assignee: IMP, Inc.Inventors: Douglas L. Hiser, Kou-Hung L. Loh