Abstract: The invention is a process for making a transmission mask which can be used in structuring a semiconductor substrate in an additive or subtractive way by two galvanic depositions of layers of which one provides the mask structure and the other a grid structure covering the openings in the mask structure. The thickness of the structure is freely selectable self-adjusting (within the limits of the known engineering methods). The aim is the production of a transmission mask with a constant effective thickness above the mask surface.
Type:
Grant
Filed:
November 13, 1986
Date of Patent:
October 25, 1988
Assignee:
IMS Ionen Mikrofabrikations Systems Gesellschaft mbH