Abstract: Disclosed herein is a light-absorbing layer for a solar cell with enhanced sunlight absorption comprising CuGaSe2, CuIn1-xGaxSe2 and CuInSe2 thin films laminated one another. Further disclosed is a method of manufacturing the light absorbing layer. The method comprises the steps of: forming an InSe thin film from a single precursor containing In and Se on a substrate by metal organic chemical vapor deposition; forming a Cu2Se thin film using a Cu precursor on the InSe thin film by metal organic chemical vapor deposition; forming a CuGaSe2 thin film using a single precursor containing Ga and Se on the Cu2Se thin film by metal organic chemical vapor deposition; and forming a CuGaSe2/CuInSe2 multilayer thin-film structure using the single precursor containing In and Se and the Cu precursor on the CuGaSe2 thin film by metal organic chemical vapor deposition.

Abstract: Disclosed herein is a method for producing a 1-IH-VI2 compound thin film on a substrate through a single Metal Organic Chemical Vapor Deposition (MOCVD) process, wherein a Group III element and Group VI element-containing single precursor, a Group I metal-containing precursor, and a Group VI element-containing precursor or a Group VI element-containing gas are concurrently supplied to a substrate and subjected to MOCVD to form a I-III-VI2 compound thin film on the substrate. The method employs a single deposition process to form the thin film and is thus provides a more economical, simplified process as compared to conventional methods. In addition, the method is capable of producing a thin film with an even surface and few or no inner pores, and, advantageously, is thus useful as a light-absorbing layer for a solar cell.

Abstract: The present invention relates to a process for producing CuInSe2 and CuIn1XGa,Se2 thin films used as an absorption layer for a solar cell such that they have a structure near to chemical equivalence ratio. The present invention provides a process for producing a thin film for a solar cell, comprising forming an InSe thin film on a substrate by Metal Organic Chemical Vapor Deposition using a [Me2In-(?SeMe)]2 precursor; forming a Cu2Se thin film on the InSe thin film by Metal Organic Chemical Vapor Deposition using a (hfac)Cu(DMB) precursor, and forming a CuInSe2 thin film on the Cu2Se thin film by Metal Organic Chemical Vapor Deposition using a [Me2In-(?SeMe)]2 precursor. Further, the process may further comprise forming a CuIn1,Ga,Se2 thin film on the CuInSe2 thin film by Metal Organic Chemical Vapor Deposition using a [Me2Ga-(?SeMe)]2 precursor.

Abstract: Disclosed herein is a method for producing a light-absorbing layer for a solar cell that is capable of economically and efficiently forming an I-III-VI2 compound thin film used as a light-absorbing layer for a solar cell. The method comprises (a) depositing a single precursor including Group III and VI elements on a substrate by metal organic chemical vapor deposition (MOCVD) to form a Group III-VI or III2-VI3 compound thin film, (b) depositing a precursor including a Group I element on the III-VI or III2-VI3 compound thin film by MOCVD to form a I-III-VI compound thin film composed of Group I, III and VI elements, and (c) heating the I-III-VI compound thin film under a Group VI element-containing gas atmosphere or depositing a Group VI element-including precursor on the I-III-VI compound thin film by MOCVD to form an I-III-VI2 compound thin film.

Abstract: Disclosed herein is a light-absorbing layer for a solar cell with enhanced sunlight absorption comprising CuGaSe2, CuIn1-xGaxSe2 and CuInSe2 thin films laminated one another. Further disclosed is a method of manufacturing the light absorbing layer. The method comprises the steps of: forming an InSe thin film from a single precursor containing In and Se on a substrate by metal organic chemical vapor deposition; forming a Cu2Se thin film using a Cu precursor on the InSe thin film by metal organic chemical vapor deposition; forming a CuGaSe2 thin film using a single precursor containing Ga and Se on the Cu2Se thin film by metal organic chemical vapor deposition; and forming a CuGaSe2/CuInSe2 multilayer thin-film structure using the single precursor containing In and Se and the Cu precursor on the CuGaSe2 thin film by metal organic chemical vapor deposition.

Abstract: The present invention relates to a process for producing CuInSe2 and CuIn1XGa,Se2 thin films used as an absorption layer for a solar cell such that they have a structure near to chemical equivalence ratio. The present invention provides a process for producing a thin film for a solar cell, comprising forming an InSe thin film on a substrate by Metal Organic Chemical Vapor Deposition using a [Me2In-(?SeMe)]2 precursor; forming a Cu2Se thin film on the InSe thin film by Metal Organic Chemical Vapor Deposition using a (hfac)Cu(DMB) precursor, and forming a CuInSe2 thin film on the Cu2Se thin film by Metal Organic Chemical Vapor Deposition using a [Me2In-(?SeMe)]2 precursor. Further, the process may further comprise forming a CuIn1,Ga,Se2 thin film on the CuInSe2 thin film by Metal Organic Chemical Vapor Deposition using a [Me2Ga-(?SeMe)]2 precursor.