Patents Assigned to Inc. Motorola
  • Semiconductor device having reduced capacitance and method of fabrication thereof
    Patent number: 4404579
    Abstract: A spacer region is provided between the channel stop region and the adjacent portion of the active region of a semiconductor device to reduce the capacitance therebetween. The spacer region may be formed by allowing at least a portion of a conductive line formed on the surface of the device to overlap the active region adjacent the channel stop region.
    Type: Grant
    Filed: October 28, 1980
    Date of Patent: September 13, 1983
    Assignee: Inc. Motorola
    Inventor: Horst Leuschner