Patents Assigned to Indian Institute of Technology Kanpur
  • Patent number: 11734541
    Abstract: The present disclosure relates to the field of security systems and discloses a tamper detection device. The device (100) comprises at least one transducer (106,110), a power supply unit (114), a logical gate (112), a processing unit (104), and, a tamper tag 102). The transducer (106,110) generates a trigger signal upon detection of a tamper event. The logical gate (112) is operable in an open state or a closed state. The processing unit (104) generates a tamper detection signal for changing the state of the logical gate (112) upon receiving the trigger signal or upon detecting loss of power supply from the power supply unit (114). The change in state of logical gate (112) causes a tamper flag value stored in the tamper tag (102) to change, thereby indicating a tampered status to a reader scanning the tamper tag (102). The device (100) detects a tamper event even if the device (100) is not damaged/broken during tampering.
    Type: Grant
    Filed: January 25, 2021
    Date of Patent: August 22, 2023
    Assignees: SEPIO PRODUCTS PRIVATE LIMITED, INDIAN INSTITUTE OF TECHNOLOGY, KANPUR
    Inventors: Murad Nathani, Darshan Dhruman Gandhi, Paul Abner Noronha, Dattaprasad Narayan Kamat, Sabine Juliane Tripathi, Yashowanta Narayan Mohapatra, Biswanath Panda, Akhil Kumar Singh Rathore
  • Patent number: 10258975
    Abstract: Method of forming micro channels in a polymeric nanocomposite film is provided. The method includes combining one or more monomers to form a mixture and adding a plurality of carbon fibers with metal nanoparticles dispersed therein to the mixture prior to or concurrently with formation of a polymer from the monomers. The method also includes adding at least one hydrophobic agent and at least one plasticizer to the polymer to form the polymeric nanocomposite film and forming a plurality of laser-etched micro channels in a surface of the polymeric nanocomposite film.
    Type: Grant
    Filed: January 20, 2015
    Date of Patent: April 16, 2019
    Assignee: INDIAN INSTITUTE OF TECHNOLOGY KANPUR
    Inventors: Nishith Verma, Janakarajan Ramkumar, Prateek Khare
  • Patent number: 10245368
    Abstract: The present invention relates to the field of bio-artificial liver technology. Particularly, the invention provides an integrated hybrid bio-artificial liver support system that provides the features of artificial liver assist devices with that of bio-artificial liver support systems.
    Type: Grant
    Filed: July 29, 2016
    Date of Patent: April 2, 2019
    Assignee: INDIAN INSTITUTE OF TECHNOLOGY, KANPUR
    Inventors: Ashok Kumar, Apeksha Damania
  • Patent number: 10227458
    Abstract: Methods of forming a polymeric nanocomposite are provided. The methods include combining one or more monomers to form a mixture and adding a plurality of carbon fibers to the mixture prior to or concurrently with formation of a polymer from the monomers. The methods can also include polymerizing the monomers to form the polymer and adding a hydrophobic agent and a plasticizer to the mixture to form the polymer nanocomposite.
    Type: Grant
    Filed: October 1, 2013
    Date of Patent: March 12, 2019
    Assignee: INDIAN INSTITUTE OF TECHNOLOGY KANPUR
    Inventors: Nishith Verma, Jayant Kumar Singh, Ajit Kumar Sharma
  • Patent number: 10198481
    Abstract: Embodiments of the present disclosure set forth methods for selecting a preferred data set from distributed databases including a first database having a first probability attribute and a second database having a second probability attribute. One example method may include receiving a first data set from the first database and a second data set from the second database. The first data set includes a first monotonic attribute. The second data set includes a second monotonic attribute. It may further include selecting a candidate data set from one of the first data set and the second data set based on a comparison of the first monotonic attribute and the second monotonic attribute and determining whether the selected candidate data set is the preferred data set.
    Type: Grant
    Filed: February 19, 2014
    Date of Patent: February 5, 2019
    Assignee: INDIAN INSTITUTE OF TECHNOLOGY KANPUR
    Inventors: Arnab Bhattacharya, Shashwat Mishra
  • Patent number: 10007883
    Abstract: Embodiments of the present disclosure set forth methods for selecting a preferred data set. The methods include generating a joined relation based on a first relation having a first join attribute and a first existence probability attribute, and a second relation having a second join attribute compatible with the first join attribute and a second existence probability attribute, wherein the joined relation comprises a skyline probability attribute based at least in part on the product of a second value of the first existence probability attribute and a third value of the second existence probability attribute; and selecting, by one or more processors, the preferred data set from the joined relation based on a comparison of the first value of the skyline probability attribute and a predetermined threshold.
    Type: Grant
    Filed: April 25, 2013
    Date of Patent: June 26, 2018
    Assignee: INDIAN INSTITUTE OF TECHNOLOGY KANPUR
    Inventors: Arnab Bhattacharya, Avani Nandini
  • Patent number: 9940868
    Abstract: Technologies are generally described for the display of images by employing monotonic matrix factorization and sub-frame approximation image integration. In some examples, drive signals for a display device may be generated by iteratively applying a monotonic non-negative matrix factorization (NNMF) process to source image data. A given iteration of the monotonic NNMF process may result in approximation image data, partial sum image data, and residue image data, some or all of which may be further processed via subsequent iterations of the monotonic NNMF process. A generated approximation image data may then be displayed during a sub-frame time interval by selective activation of multiple row and column drivers. A series of such displayed approximation image data may effectively correspond to the original source image. In particular, the monotonic NNMF process may allow the generation of non-negative residue image data without the use of element reduction.
    Type: Grant
    Filed: October 15, 2015
    Date of Patent: April 10, 2018
    Assignee: Indian Institute of Technology Kanpur
    Inventors: Yogesh Kumar Soniwal, Venkatesh K Subramanian, Amit Mitra
  • Patent number: 9908102
    Abstract: Methods of forming a hierarchical porous monolith are provided. The methods include mixing a monomer, a silica precursor and a catalyst in a solvent to form a mixture. The methods also include adding a gelling agent to the mixture to form a polymer-silica composite gel. The polymer-silica composite gel undergoes a phase separation to separate from the solvent and the unreacted silica precursor. The method further includes drying the polymer-silica composite gel to evaporate the solvent to form a polymer-silica monolith and processing the polymer-silica monolith to form at least one of a polymer monolith, a carbon monolith, a silica monolith and a carbon-silica monolith.
    Type: Grant
    Filed: April 9, 2015
    Date of Patent: March 6, 2018
    Assignee: INDIAN INSTITUTE OF TECHNOLOGY KANPUR
    Inventors: Ashutosh Sharma, Shishir Katiyar, Kunal Mondal
  • Patent number: 9844222
    Abstract: A metal nanoparticles-doped porous carbon bead having an average size of about 0.4 millimeter (mm) to about 0.6 mm is provided. The metal nanoparticles-doped porous carbon bead is doped with silver, copper, or combinations thereof.
    Type: Grant
    Filed: August 19, 2014
    Date of Patent: December 19, 2017
    Assignee: INDIAN INSTITUTE OF TECHNOLOGY KANPUR
    Inventors: Nishith Verma, Ashutosh Sharma, Prateek Khare
  • Patent number: 9831453
    Abstract: Technologies are generally described for a four-terminal, gate-controlled, thin-film thyristor device. The thyristor device may essentially be an n-type thin-film transistor (TFT) with an additional emitter terminal. The thyristor device may exhibit an S-shaped negative differential resistance (NDR) characteristic resulting from conductance modulation. The conductance modulation may be caused by formation of a secondary channel for current flow due to an inherent structure of the device. The secondary channel may be formed in a semiconductor area within the device, the semiconductor area including a hole transporting organic semiconductor layer (HTL) and an electron transporting organic semiconductor layer (ETL). A gate terminal of the thyristor device may further allow onset of NDR characteristics to be controlled and may allow the device to be switched off.
    Type: Grant
    Filed: December 28, 2013
    Date of Patent: November 28, 2017
    Assignee: INDIAN INSTITUTE OF TECHNOLOGY KANPUR
    Inventors: Baquer Mazhari, Arjit Ashok
  • Patent number: 9809466
    Abstract: Bi-metal nanoadsorbents and methods for their preparation and use are provided. Methods of using bi-metal nanoadsorbents to remove contaminants from samples, such as water, are also provided.
    Type: Grant
    Filed: May 29, 2012
    Date of Patent: November 7, 2017
    Assignee: Indian Institute of Technology Kanpur
    Inventors: Ashutosh Sharma, Nishith Verma, Ajit Kumar Sharma
  • Patent number: 9778202
    Abstract: Systems and methods for imaging characteristics of a sample and for identifying regions of damage in the sample are generally described. Some example systems and methods for non-destructive evaluation of regions of material may operate in a direct current (DC) mode in which the system directly images regions of material where weak structural damage has occurred by imaging a self magnetic field generated by a DC electric current coupled through the material. Some example systems may operate in an alternating current (AC) mode to image regions of material where damage has occurred by generating a time varying magnetic field due to AC excitation coils inducing eddy currents in the sample, and imaging a magnetic field generated by the eddy currents around the regions of damage. The systems may use magneto-optical imaging techniques (MOI) to measure and map the magnetic field and channels of current flow in the material, for example.
    Type: Grant
    Filed: November 29, 2010
    Date of Patent: October 3, 2017
    Assignee: Indian Institute of Technology Kanpur
    Inventors: Satyajit Banerjee, Shyam Mohan, Jaivardhan Sinha
  • Patent number: 9733366
    Abstract: An apparatus for characterizing a focused charged beam is provided. The apparatus includes a plurality of parallel conducting channels and at least one current sensing unit configured to measure current across each of the plurality of parallel conducting channels.
    Type: Grant
    Filed: April 16, 2013
    Date of Patent: August 15, 2017
    Assignee: INDIAN INSTITUTE OF TECHNOLOGY KANPUR
    Inventors: Sudeep Bhattacharjee, Samit Paul
  • Patent number: 9680097
    Abstract: Methods of forming an organic thin film transistor are provided. The methods include providing a substrate and depositing and patterning a gate electrode on a first surface of the substrate. The methods include dispensing a first droplet of an insulating material on the gate electrode on the substrate and dispensing a second droplet of a semiconductor material on a first surface of the first droplet. The second droplet forms a hydrophobic structure having a central cavity. The methods also include dispensing a third droplet of a conductor material on a first surface of the second droplet such that the conductor material substantially fills the central cavity of the hydrophobic structure and forms a conductor material layer around the central cavity to define a source electrode and a drain electrode of the organic thin film transistor.
    Type: Grant
    Filed: April 3, 2014
    Date of Patent: June 13, 2017
    Assignee: INDIAN INSTITUTE OF TECHNOLOGY KANPUR
    Inventors: Saumen Mandal, Monica Katiyar
  • Patent number: 9627840
    Abstract: Techniques described herein are generally related to metamaterial structures for Q-switching in laser systems. The various described techniques may be applied to methods, systems, devices or combinations thereof. Some described metamaterial structures may include a substrate and a first conductive layer disposed on a first surface of the substrate. A dielectric layer may be disposed on a first surface of the first conductive layer and a second conductive layer having a substantially symmetric geometric shape may be disposed on a first surface of the dielectric layer. The second conductive layer may cover a portion of the first surface of the dielectric layer.
    Type: Grant
    Filed: April 17, 2013
    Date of Patent: April 18, 2017
    Assignee: INDIAN INSTITUTE OF TECHNOLOGY KANPUR
    Inventors: Ramakrishna Subramaniam Anantha, Govind Dayal Singh
  • Publication number: 20170065069
    Abstract: Nanobrushes, methods of forming nanobrushes, and methods of altering material with a nanobrush are disclosed herein. A nanobrush may include a substrate having a surface and a plurality of bristles deposited on at least one portion of the surface. The plurality of bristles may be arranged into a plurality of bunches. Each of the plurality of bunches may be spaced from an adjacent bunch at a bunch interval equal to or less than about 100 ?m.
    Type: Application
    Filed: February 25, 2015
    Publication date: March 9, 2017
    Applicant: INDIAN INSTITUTE OF TECHNOLOGY KANPUR
    Inventors: Ramakrishna SUBRAMANIAM ANANTHA, Jhuma DUTTA
  • Patent number: 9576767
    Abstract: A focused ion beam system is provided. The focused ion beam system includes a plasma generation chamber configured to contain a source gas that is radiated with microwaves to produce plasma. The plasma generation chamber includes a plasma confinement device configured to confine the plasma in radial and axial directions within the plasma generation chamber and to form a plasma meniscus at an extraction end of the plasma generation chamber. The focused ion beam system also includes a beam extraction chamber configured to extract a focused ion beam from the confined plasma and to focus the extracted focused ion beam on a workpiece.
    Type: Grant
    Filed: March 18, 2014
    Date of Patent: February 21, 2017
    Assignee: INDIAN INSTITUTE OF TECHNOLOGY KANPUR
    Inventors: Sudeep Bhattacharjee, Jose Vettiyankal Mathew
  • Publication number: 20170043331
    Abstract: Method of forming micro channels in a polymeric nanocomposite film is provided. The method includes combining one or more monomers to form a mixture and adding a plurality of carbon fibers with metal nanoparticles dispersed therein to the mixture prior to or concurrently with formation of a polymer from the monomers. The method also includes adding at least one hydrophobic agent and at least one plasticizer to the polymer to form the polymeric nanocomposite film and forming a plurality of laser-etched micro channels in a surface of the polymeric nanocomposite film.
    Type: Application
    Filed: January 20, 2015
    Publication date: February 16, 2017
    Applicant: INDIAN INSTITUTE OF TECHNOLOGY KANPUR
    Inventors: Nishith VERMA, Janakarajan RAMKUMAR, Prateek KHARE
  • Patent number: 9540546
    Abstract: A pressure-sensitive adhesive material including a visco-elastic layer and an elastic layer is provided. In some embodiments, a reusable pressure-sensitive adhesive material exhibiting high adhesive strength after repeated cycles of adhesion and detachment is provided. In some embodiments, methods of making a pressure sensitive adhesive material are provided.
    Type: Grant
    Filed: March 9, 2012
    Date of Patent: January 10, 2017
    Assignee: INDIAN INSTITUTE OF TECHNOLOGY KANPUR
    Inventors: Ashutosh Sharma, Sandip Patil
  • Patent number: 9536935
    Abstract: A novel light-emitting device includes an organic thin-film structure that is merged with an organic light-emitting diode structure by utilizing a part of the electron accumulation layer in the organic thin-film transistor as a common electrode for each structure. The organic thin-film structure and the organic light-emitting diode structure each include an organic semiconductor that comprises a material in which hole mobility is greater in a bulk region of the material than electron mobility in the bulk region. The advantages of such a light-emitting device include less complex processing and a simpler pixel circuit structure in comparison to separately fabricating OTFT and OLED structures and subsequently interconnecting them to form a pixel. Furthermore, relative to a light-emitting transistor, some embodiments offer the advantage of a broader light emission area more suitable for use in display devices.
    Type: Grant
    Filed: March 11, 2015
    Date of Patent: January 3, 2017
    Assignee: INDIAN INSTITUTE OF TECHNOLOGY KANPUR
    Inventors: Baquer Mazhari, Ankita Gangwar