Patents Assigned to Indiana University of Pennsylvania
  • Thermally activated magnetic and resistive aging
    Patent number: 9157879
    Abstract: Examples of the present invention include apparatus and methods for monitoring aging of an item. A solid-state structure is located within, adjacent to, or otherwise proximate the item, the solid-state structure including nanostructures. The electrical resistance and/or magnetization of the solid-state structure is determined to determine the degree of aging of the item. In representative examples, the solid-state structure includes nanostructures of a metal, such as a ferromagnetic metal, within a non-magnetic matrix, such as a semimetal, semiconductor, or insulator.
    Type: Grant
    Filed: April 10, 2014
    Date of Patent: October 13, 2015
    Assignee: Indiana University of Pennsylvania
    Inventor: Gregory G. Kenning
  • Thermally activated magnetic and resistive aging
    Patent number: 9041419
    Abstract: Examples of the present invention include apparatus and methods for monitoring aging of an item. A solid-state structure is located within, adjacent to, or otherwise proximate the item, the solid-state structure including nanostructures. The electrical resistance and/or magnetization of the solid-state structure is determined to determine the degree of aging of the item. In representative examples, the solid-state structure includes nanostructures of a metal, such as a ferromagnetic metal, within a non-magnetic matrix, such as a semimetal, semiconductor, or insulator.
    Type: Grant
    Filed: April 13, 2012
    Date of Patent: May 26, 2015
    Assignee: Indiana University of Pennsylvania
    Inventor: Gregory G. Kenning
  • THERMALLY ACTIVATED MAGNETIC AND RESISTIVE AGING
    Publication number: 20140292355
    Abstract: Examples of the present invention include apparatus and methods for monitoring aging of an item. A solid-state structure is located within, adjacent to, or otherwise proximate the item, the solid-state structure including nanostructures. The electrical resistance and/or magnetization of the solid-state structure is determined to determine the degree of aging of the item. In representative examples, the solid-state structure includes nanostructures of a metal, such as a ferromagnetic metal, within a non-magnetic matrix, such as a semimetal, semiconductor, or insulator.
    Type: Application
    Filed: April 10, 2014
    Publication date: October 2, 2014
    Applicant: Indiana University of Pennsylvania
    Inventor: Gregory G. Kenning
  • THERMALLY ACTIVATED MAGNETIC AND RESISTIVE AGING
    Publication number: 20120262194
    Abstract: Examples of the present invention include apparatus and methods for monitoring aging of an item. A solid-state structure is located within, adjacent to, or otherwise proximate the item, the solid-state structure including nanostructures. The electrical resistance and/or magnetization of the solid-state structure is determined to determine the degree of aging of the item. In representative examples, the solid-state structure includes nanostructures of a metal, such as a ferromagnetic metal, within a non-magnetic matrix, such as a semimetal, semiconductor, or insulator.
    Type: Application
    Filed: April 13, 2012
    Publication date: October 18, 2012
    Applicant: Indiana University of Pennsylvania
    Inventor: Gregory G. Kenning