Abstract: Disclosed is a headset including at least one in-ear microphone; at least one out-ear microphone; a control unit including an in-ear signal processing module for extracting low frequency components from a signal sensed through the in-ear microphone, an out-ear signal processing module for extracting high frequency components from a signal sensed through the out-ear microphone, and a mixing module for mixing the extracted low frequency components and high frequency components and outputting the mixed signal; and a communication unit for transmitting the signal output from the mixing module of the control unit to an external device, and sound quality can be improved by removing noises in a voice signal of a user transferred through the headset and creating a signal close to the voice of the user.
Abstract: Disclosed is a memory test method including receiving a memory test command, receiving pattern information for generating a data pattern to be written in a memory cell, and programming the memory cell according to the pattern information. According to this method, it is not required to receive external data to be programmed in a cell array.
Abstract: Provided is a method of manufacturing an abrasive particle including a mother particle and a plurality of auxiliary particles formed on a surface of the mother particle, and a method of manufacturing a polishing slurry in which the abrasive particle is mixed with a polishing accelerating agent and a pH adjusting agent.
Abstract: Provided are an abrasive particle including auxiliary particles formed on a surface of a mother particle, a polishing slurry prepared by mixing the abrasive particles with a polishing accelerating agent and a pH adjusting agent, and a method of manufacturing a semiconductor device in which an insulating layer is polished by the polishing slurry while using a conductive layer as a polishing stop layer.
Abstract: Disclosed is a method of reading data from a memory including a NAND cell array for performing communications via a serial peripheral interface (SPI) bus. The method includes sequentially receiving inputs of a block address, a word-line address, and a bit-line address of the NAND cell array; and starting to output data written in the NAND cell array immediately after the bit-line address is completely input. In this case, the sequential receiving of the inputs is performed via one input terminal.
Abstract: A method of writing data in a memory comprising a NAND cell array is disclosed, wherein a data output device completes the writing process only by transmitting the data and a start address for writing the data to the memory.
Abstract: Provided are a non-volatile memory device, an electronic control system, and a method of operating the non-volatile memory device. A non-volatile memory device according to an embodiment of the present invention includes a first NAND cell array including a first group of pages, and a second NAND cell array including a second group of pages. A plurality of X-decoders are at least one-to-one connected to the first and second NAND cell arrays. A control logic controls the plurality of X-decoders to simultaneously sense data of a first page corresponding to a start address from among the first group of pages, and data of a second page subsequent to the first page from among the second group of pages.
Abstract: Provided is a method of manufacturing an abrasive particle including a mother particle and a plurality of auxiliary particles formed on a surface of the mother particle, and a method of manufacturing a polishing slurry in which the abrasive particle is mixed with a polishing accelerating agent and a pH adjusting agent.
Abstract: The present invention relates to a CMP slurry composition for polishing tungsten comprising a abrasive and a polishing chemical, wherein the abrasive comprises colloidal silica dispersed in ultra-pure water, and the polishing chemical comprises hydrogen peroxide, ammonium persulfate and iron nitrate. The slurry composition is not discolored and has good etching selectivity, so as to be applied to a CMP process.
Type:
Grant
Filed:
July 6, 2012
Date of Patent:
October 20, 2015
Assignee:
INDUSTRIAL BANK OF KOREA
Inventors:
Jea-Gun Park, Jin-Hyung Park, Jae-Hyung Lim, Jong-Young Cho, Ho Choi, Hee-Sub Hwang