Abstract: A cadmium tin oxide (Cd1?xSnxO) multi-layer laminate is disclosed. The laminate comprises: a substrate; and a layer of Cd1?xSnxO which is not an epitaxial structure; wherein, the composition of Sn/(Cd+Sn) is 1˜20%. The method for producing the Cd1?xSnxO multi-layer laminate is also described here. The method comprises steps of: (a) providing metal or oxide targets for sputtering films of Cd1?xSnxO; and (b) sputtering films of Cd1?xSnxO from the targets onto the substrate; wherein the composition of Sn/(Cd+Sn) is 1˜20%.
Type:
Grant
Filed:
December 20, 2005
Date of Patent:
January 19, 2010
Assignees:
Industrial Research Technology Institute, Toth Information System, Inc.
Inventors:
Tien-Heng Huang, Ren-Jye Wu, Wen-Hsuan Chao, Lih-Ping Wang, Hung-Chiao Cheng, Jassy Shian-Jy Wang, Shu-Hei Wang, John R. Rodgers
Abstract: In an overlay metrology method used during semiconductor device fabrication, an overlay alignment mark facilitates alignment and/or measurement of alignment error of two layers on a semiconductor wafer structure, or different exposures on the same layer. A target is small enough to be positioned within the active area of a semiconductor device combined with appropriate measurement methods, which result in improved measurement accuracy.
Type:
Grant
Filed:
January 13, 2005
Date of Patent:
May 27, 2008
Assignees:
Nanometrics Incorporated, Industrial Research Technology Institute
Inventors:
Nigel Peter Smith, Yi-Sha Ku, Hsin Lan Pang
Abstract: A MOSFET structure utilizing strained silicon carbon alloy and fabrication method thereof. The MOSFET structure includes a substrate, a graded SiGe layer, a relaxed buffer layer, a strained silicon carbon alloy channel layer, a gate dielectric layer, a polysilicon gate electrode (or metal gate electrode) and a source/drain region.
Type:
Grant
Filed:
March 4, 2004
Date of Patent:
August 15, 2006
Assignee:
Industrial Research Technology Institute
Inventors:
Min-Hung Lee, Shu Tong Chang, Shing Chii Lu, Chee-Wee Liu
Abstract: The present invention relates to a method of immobilizing proteins on a polymeric matrix by means of plasma activation and an apparatus and process for the use of such material. The protein mixture is applied to the surface of the polymeric matrix with or without the addition of a crosslinking agent. If is then placed into a plasma generator, wherein the functional groups on both the protein and the matrix molecules are activated to form free radicals. Upon returning from their high energy state, the free radicals form covalent bonds between the proteins and between the protein and the polymeric matrix. Using this method, the proteins are nonspecifically immobilized on the surface of the polymeric matrix. The method can be utilized to immobilize proteins on the surface of polymeric membranes, polymeric beads, polymeric tubes and polymeric plates. The immobilized protein has high biological activity and stability.
Type:
Grant
Filed:
July 18, 1988
Date of Patent:
July 2, 1991
Assignee:
Industrial Research Technology Institute
Inventors:
Tien-Tsai Hsu, Mann-Tchao Wang, Kuang-Pin Hsiung, Ging H. Hsiue, Min-Shyan Sheu