Patents Assigned to INDUSTRIAL TECHNOLOGY RESEARACH INSTITUTE
  • PHASE CHANGE MEMORY DEVICES AND FABRICATION METHODS THEREOF
    Publication number: 20080296554
    Abstract: Phase change memory devices and fabrication methods thereof. A phase change memory device includes an array of phase change memory cells. Each phase change memory cell includes a selecting transistor disposed on a substrate. An upright electrode structure is electrically connected to the selecting transistor. An upright phase change memory layer is stacked on the upright electrode structure with a contact area therebetween, wherein the contact area serves as the location where phase transition takes place.
    Type: Application
    Filed: December 27, 2007
    Publication date: December 4, 2008
    Applicants: INDUSTRIAL TECHNOLOGY RESEARACH INSTITUTE, POWERCHIP SEMICONDUCTOR CORP., NANYA TECHNOLOGY CORPORATION, PROMOS TECHNOLOGIES INC., WINBOND ELECTRONICS CORP.
    Inventor: Chien-Min Lee